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首页> 外文会议>Conference on Advances in Resist Technology and Processing >Wet-recess process optimization of a developer-soluble gap-fill material for planarization of trenches in trench-first dual damascene process
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Wet-recess process optimization of a developer-soluble gap-fill material for planarization of trenches in trench-first dual damascene process

机译：湿式凹陷过程优化显影剂 - 可溶性间隙填充材料，用于沟槽 - 第一双镶嵌工艺中沟槽的平坦化

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摘要

This paper describes a new approach to help overcome the challenges of fabricating leading-edge devices by using the trench first dual damascene process. Wet gap-fill materials are designed to reduce film thickness bias across a wafer while keeping wafers in the same track in which they were coated. As the first process step, the wafer is coated with a thick layer of wet gap-fill material to fill all trenches, thus guarding against resist pooling in the trenches. The substrate is then baked to partially cure the wet gap-fill material. Standard 0.26N tetramethylammonium hydroxide (TMAH) is then used to wet etch the wet gap-fill layer back to the substrate surface. For this study, substrates with different trench depths and widths were processed, cross-sectioned, and measured. The effect of trench dimensions and aspect ratio on the develop properties of WGF200-343 was investigated to see if it could be used as a wet trench-fill material. This work will help develop a process that will allow the use of trench-first DD processing in modern semiconductor manufacturing.
机译：本文介绍了一种帮助克服通过使用沟槽的第一双镶嵌工艺来克服领先设备的挑战的新方法。湿间隙 - 填充材料旨在减少晶片上的膜厚度偏压，同时保持在它们涂覆的同一轨道中的晶片。作为第一工艺步骤，晶片涂有厚的湿间隙 - 填充材料层以填充所有沟槽，从而防止抗蚀剂在沟槽中粘合。然后烘烤基板以部分地固化湿间隙填充材料。然后使用标准的0.26N氢氧化氢氧化铵（TMAH）湿蚀刻湿间隙填充层回到基板表面。对于该研究，处理，横截面和测量具有不同沟槽深度和宽度的基板。研究了沟槽尺寸和纵横比对WGF200-343的发育性能的影响，看看它是否可以用作湿沟填充材料。这项工作将有助于开发一个过程，以允许在现代半导体制造中使用沟槽第一DD处理。

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