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Novel Design Methodology for Short-Channel MOSFET Analog Circuits

机译:短通道MOSFET模拟电路的新型设计方法

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This paper presents a methodology that addresses short-channel effects to design MOSFET circuits. The circuit design is based on a combination of parameter extraction and simple analytical models that allows precise results. The extraction mainly depends on the inversion level, which is independent of geometry, therefore providing points that are applicable to a wide variety of circuits. Trade-offs and design space of the device are clearly brought to the circuit design. Hand calculations and simulations of a common-source amplifier illustrate the methodology.
机译:本文提出了一种解决设计MOSFET电路的短信效应的方法。电路设计基于参数提取和简单的分析模型的组合,允许精确的结果。提取主要取决于反转水平,其独立于几何形状,因此提供适用于各种电路的点。该设备的权衡和设计空间显然是电路设计。公共源放大器的手计算和仿真说明了方法。

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