Non-catalyst and low temperature growth of vertically aligned carbon nanotubes for nanosensor arrays

机译：用于纳米传感器阵列的垂直取向碳纳米管的非催化剂和低温生长

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In this paper we present a new technique to vertically grow aligned carbon nanotubes (CNTs) on nanosize pore anodic aluminum oxide (AAO) templates on a Si substrate. The CNTs are grown using methane in an RF PECVD system at only 400/spl deg/C without using a transition metal catalyst. The AAO templates are prepared by a two-step anodizing process in oxalic acid at room temperature. The influence of preparation conditions, such as temperature, electrolyte, applied voltage and anodization time on the density, diameter, length and the shape of the pores is investigated. The diameter of the pores of AAO film varies from 30 nm to 70 nm. The average diameter and length of CNTs are approximately 40 nm and 1 /spl mu/m respectively. This low temperature, IC-compatible process is very attractive as it allows integration of CNT devices with on-chip electronics.

机译：本文介绍了一种新的技术在Si衬底上垂直于垂直于垂直于纳米孔阳极氧化铝（AAO）模板上的对齐的碳纳米管（CNT）。使用过渡金属催化剂，仅在RF PECVD系统中使用甲烷在RF PECVD系统中生长。 AAO模板通过在室温下在草酸中的两步阳极氧化方法制备。研究了制备条件的影响，例如温度，电解质，施加的电压和阳极氧化时间对孔的密度，直径，长度和形状的密度，直径，长度和形状。 AaO膜的孔的直径在30nm至70nm之间变化。 CNT的平均直径和长度分别为约40nm和1 / spl mu / m。这种低温，IC兼容的过程非常有吸引力，因为它允许将CNT器件集成到片上电子器件。

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《International Conference on Solid-State Sensors, Actuators and Microsystems》|2005年||共4页
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Pham H.T.M.; de Boer C.R.; Sarro P.M.;
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中图分类 TP21-53;
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aluminium compounds; anodisation; carbon nanotubes; nanoporous materials; plasma CVD; 1 micron; 30 to 70 nm; 40 nm; 400 degC; AAO templates; Al/sub 2/O/sub 3/; C; RF PECVD; low temperature CNT growth; low temperature IC-compatible process; methane; nanosensor arrays; nan;

机译：铝化合物;散热;碳纳米管;纳米多孔材料;血浆CVD;1微米;30至70nm;40nm;400 degc;AAO模板;A1 / sub 2 / O / sub 3 /;c;rf pecvd;低温cnt增长;低温IC兼容过程;甲烷;纳米传感器阵列;南;

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1. Vertically aligned carbon nanotube arrays growth modeling at different temperatures and pressures in reactor [J] . Bulyarskiy Sergey V, Gusarov George G., Lakalin Aleksandr V, Diamond and Related Materials . 2020,第期

机译：垂直对准的碳纳米管阵列在不同温度和反应器中的压力下生长建模
2. Rational control on floating catalysts for the growth of carbon nanotube assemblies: From vertically aligned carbon nanotube arrays to carbon nanotube films [J] . Chen Hongyuan, Chen Minghai, Zhang Yongyi, Applied Surface Science . 2015,第OCTa30期

机译：合理控制用于碳纳米管组件生长的漂浮催化剂：从垂直排列的碳纳米管阵列到碳纳米管薄膜
3. Growth of manganese oxide nanoflowers on vertically-aligned carbon nanotube arrays for high-rate electrochemical capacitive energy storage [J] . Zhang H, Cao GP, Wang ZY, Nano letters . 2008,第9期

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4. Non-catalyst and low temperature growth of vertically aligned carbon nanotubes for nanosensor arrays [C] . Pham, H.T.M., de Boer, . 2005

机译：用于纳米传感器阵列的垂直排列的碳纳米管的非催化剂和低温生长
5. Chirality control of single-walled carbon nanotubes on surfaces and optimization of their growth in vertically-aligned arrays. [D] . Pheasant, Sean T. 2007

机译：表面单壁碳纳米管的手性控制及其在垂直排列阵列中的生长优化。
6. Atomic Layer Deposition of Buffer Layers for the Growth of Vertically Aligned Carbon Nanotube Arrays [O] . Hao-Hao Li, Guang-Jie Yuan, Bo Shan, 2019

机译：缓冲层的原子层沉积用于垂直排列的碳纳米管阵列的生长。
7. High-rate low-temperature growth of vertically aligned carbon nanotubes [O] . N G Shang, Y Y Tan, V Stolojan, 2011

机译：垂直对准碳纳米管的高速率低温生长
8. Molecular Jet Growth of Carbon Nanotubes and Dense Vertically Aligned Nanotube Arrays. [R] . Eres, G. 2005

机译：碳纳米管和致密垂直排列纳米管阵列的分子射流生长。

Non-catalyst and low temperature growth of vertically aligned carbon nanotubes for nanosensor arrays

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