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首页> 外文会议>European Photovoltaic Solar Energy Conference >ON THE HYDROGEN PASSIVATION OF HIGHLY DOPED EMITTERS
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ON THE HYDROGEN PASSIVATION OF HIGHLY DOPED EMITTERS

机译：关于高掺杂发射器的氢钝化

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This work focuses on the passivation of highly doped silicon surfaces. We propose here to bring more knowledge on the emitter passivation by hydrogen during the thermal annealing of standard silicon nitride ARC layer. Silicon wafers were phosphorus-diffused, and the surfaces were subsequently covered by SiN_x:H. Different rapid thermal annealing processes, varying in time and temperature, were then applied. Annealing time and temperature variations led to an optimal lifetime value. We also noticed a sheet resistance variation for different annealing parameters, although emitter had the same doping profile before annealing. This can be explained by the dopant deactivation due to the hydrogen release during annealing, leading to an effective doping decrease. Comparing the sheet resistance and the lifetime results, we found that the optimum passivation was correlated with the higher sheet resistance. Another important aspect to consider is therefore the contact resistance between emitter and metal. As hydrogen turns phosphorus inactive electrically, it can also lead to a contact resistance increase. TLM measurements allowed us to observe the evolution of the contact resistance, depending on firing temperature.
机译：这项工作侧重于高度掺杂的硅表面的钝化。我们在这里提出了在标准氮化硅弧层的热退火期间通过氢引入更多关于发射器钝化的知识。硅晶片是磷漫射，随后被Sin_x：h覆盖表面。然后施加不同的快速热退火过程，随时间和温度而变化。退火时间和温度变化导致最佳寿命值。我们还注意到不同退火参数的薄层电阻变化，尽管发射器在退火之前具有相同的掺杂曲线。这可以通过退火期间的氢释放引起的掺杂剂去激活来解释，导致有效的掺杂减少。比较薄层电阻和寿命结果，我们发现最佳钝化与更高的薄层电阻相关。因此，考虑的另一个重要方面是发射器和金属之间的接触电阻。随着氢气转动磷，电阻也可以导致接触电阻增加。 TLM测量允许我们观察接触电阻的演变，这取决于烧制温度。

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