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首页> 外文会议>European Photovoltaic Solar Energy Conference >REAR JUNCTION EPITAXIAL THIN FILM SOLAR CELLS WITH DIFFUSED FRONT SURFACE FIELD AND POROUS SILICON BACK REFLECTORS
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REAR JUNCTION EPITAXIAL THIN FILM SOLAR CELLS WITH DIFFUSED FRONT SURFACE FIELD AND POROUS SILICON BACK REFLECTORS

机译：后界外延薄膜太阳能电池，具有扩散前表面场和多孔硅背反反射器

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Thin film silicon solar cells, consisting of an epitaxially grown active (base) layer deposited on a low quality, highly doped silicon substrate, are considered as a future alternative to crystalline bulk silicon cells incorporating many of the technologically attractive features. One of the benefits of these thin film epitaxial solar cells lies in the reduced consumption of high purity silicon feedstock. Moreover this technology enables a high degree of freedom regarding the design of the solar cell structure, since it can make use of unrestricted doping profiles and full solar cell diode stacks including emitters by chemical vapour deposition (CVD) processes as well as incorporation into the cell structure of intermediate processing steps prior epitaxial layer deposition. One of such intermediate step is implementation of the porous silicon optical reflector beneath the epi layer, reflecting low energy photons back to the active epitaxial layer. Another aspect of this work is to demonstrate a cell design where the emitter is situated at the rear of the cell directly on top of the reflector and is grown in situ by CVD technique. The purpose of this work is therefore twofold. A first aim is to demonstrate the use of such rear emitter epitaxial cell and show a proof of concept in comparison with the conventional cell with the junction at the front. On the other hand, we will discuss the issues associated with the introduction of such a concept together with the reflector in thin film technology and indicate possible improvement in cell design by PC1D simulations.
机译：由沉积在低质量高度掺杂的硅衬底上的外延生长的活性（碱）层组成的薄膜硅太阳能电池被认为是结晶散硅电池的未来替代，包括许多技术有吸引力的特征。这些薄膜外延太阳能电池的一个好处在于高纯度硅原料的消耗量降低。此外，该技术能够实现关于太阳能电池结构的设计的高度自由度，因为它可以利用由化学气相沉积（CVD）工艺（CVD）工艺的不受限制的掺杂曲线和包括发射器的完整太阳能电池二极管堆叠以及掺入细胞中中间处理步骤的结构先前外延层沉积。这样的中间步骤之一是在EPI层下方的多孔硅光学反射器的实现，将低能量光子反射回到主动外延层。这项工作的另一方面是展示一个小区设计，其中发射器直接位于电池的后部，直接位于反射器的顶部，并通过CVD技术生长。因此，这项工作的目的是双重的。第一目标是展示这种后发射器外延细胞的使用，并显示与在前部结合的传统电池相比的概念证明。另一方面，我们将讨论与薄膜技术中的反射器引入这种概念相关的问题，并通过PC1D模拟表明细胞设计的可能改善。

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