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MEASUREMENT OF VERTICALLY ALIGNED CARBON NANOTUBE ARRAY BULK FRICTION IN CONTACT WITH SILICON: NANOTRIBOLOGY IV - CARBON-BASED MATERIALS (HOPG, CNT, DLC)

机译：与硅接触的垂直对准碳纳米管阵列大摩擦的测量：纳米摩擦学IV-碳基材料（HOPG，CNT，DLC）

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Arrays of Vertically Aligned Carbon Nanotubes (VACNT) have been utilized in bulk form to measure the indentation response and friction coefficients in contact with polished silicon wafers. A section of 1 mm long VACNTs, which has a contact area of ～3mm~2, was mounted with epoxy to a cylindrical aluminum stub of 4mm in diameter, and installed in a commercial nanoindenter which has long-range lateral translation capabilities. When load-displacement hysteresis measurements were performed on a silicon wafer, the VACNT array was found to stiffen with increasing load, have a larger unloading slope, and more residual deformation. Friction measurements were performed by contacting the silicon wafer and translating the silicon sample during a load-controlled scan.

机译：垂直排列的碳纳米管（VACNT）的阵列已被用于散装形式，以测量与抛光硅晶片接触的压痕响应和摩擦系数。用环氧树脂将直径为1mm长的VACNTs的一部分用环氧树脂固定在直径为4mm的圆柱形铝棒上，并安装在具有远距离横向平移能力的商用纳米压头中。当在硅晶片上执行载荷-位移滞后测量时，发现VACNT阵列会随着载荷的增加而变硬，具有更大的卸载斜率和更多的残余变形。摩擦测量是通过在负载控制的扫描过程中接触硅晶片并平移硅样品进行的。

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来源
《》|2009年|P.305-307|共3页
会议地点 Lake Buena Vista FL(US)
作者
Chad S. Korach; Alex Reiner; Changhong Cao;
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作者单位

Department of Mechanical Engineering, State University of New York at Stony Brook Stony Brook, NY 11794-2300;

rnDepartment of Mechanical Engineering, State University of New York at Stony Brook Stony Brook, NY 11794-2300;

rnDepartment of Mechanical Engineering, State University of New York at Stony Brook Stony Brook, NY 11794-2300;

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原文格式 PDF
正文语种 eng
中图分类机械摩擦、磨损与润滑;
关键词
nanotribology; materials (in tribology);

机译：纳米摩擦学材料（摩擦学）;

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2. 不同铸造工艺制备A356-CNT纳米复合材料的摩擦学行为 [J] . Benyamin ABBASIPOUR, Behzad NIROUMAND, Sayed Mahmoud MONIR VAGHEFI, 中国有色金属学报：英文版 . 2019,第010期
3. Vertically aligned silicon/carbon nanotube (VASCNT) arrays: Hierarchical anodes for lithium-ion battery [J] . Wang W., Epur R., Kumta P.N. Electrochemistry communications . 2011,第5期

机译：垂直排列的硅/碳纳米管（VASCNT）阵列：锂离子电池的分层阳极
4. A Review on Micro-Patterning Processes of Vertically Aligned Carbon Nanotubes Array (VACNTs Array) [J] . Mohd Asyraf Bin Mohd Razib, Tanveer Saleh Current Nanoscience . 2019,第4期

机译：垂直对齐碳纳米管阵列（VACNTS阵列）微图案化过程的综述
5. Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs [J] . Chen Wenchao, Yin Wen-Yan, Li Erping, Electron Devices, IEEE Transactions on . 2015,第10期

机译：3D IC垂直排列的单壁碳纳米管接触相变存储阵列的电热研究
6. MEASUREMENT OF VERTICALLY ALIGNED CARBON NANOTUBE ARRAY BULK FRICTION IN CONTACT WITH SILICON [C] . Chad S. Korach, Alex Reiner, Changhong Cao STLE Annual Meeting Exhibition . 2009

机译：垂直对准碳纳米管阵列与硅接触的垂直对准碳纳米管阵列散装摩擦
7. Fabrication and Application of Vertically Aligned Carbon Nanotube Templated Silicon Nanomaterials. [D] . Song, Jun. 2011

机译：垂直排列的碳纳米管模板化硅纳米材料的制备和应用。
8. Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission [O] . Yung-Jr Hung, Yung-Jui Huang, Hsuan-Chen Chang, 2014

机译：碳纳米管在垂直排列的硅纳米线束上的图形生长以实现均匀的场发射
9. Vertically aligned carbon nanotube field emitter arrays with Ohmic base contact to silicon by Fe-catalyzed chemical vapor deposition [O] . Morassutto, M., Tiggelaar, Roald M., Smithers, M.A., 2016

机译：垂直排列的碳纳米管场致发射极阵列，通过铁催化化学气相沉积使欧姆基与硅接触
10. Molecular Jet Growth of Carbon Nanotubes and Dense Vertically Aligned Nanotube Arrays. [R] . Eres, G. 2005

机译：碳纳米管和致密垂直排列纳米管阵列的分子射流生长。

MEASUREMENT OF VERTICALLY ALIGNED CARBON NANOTUBE ARRAY BULK FRICTION IN CONTACT WITH SILICON: NANOTRIBOLOGY IV - CARBON-BASED MATERIALS (HOPG, CNT, DLC)

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