Solid source MBE growth of lattice matched GaInAsP with phosphorus and arsenic valved cracking cells

机译：固体源MBE格式的晶格与磷和砷裂解细胞的增生

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Summary form only given. Reproducible As/P stoichiometric growth was obtained with all solid source MBE. Valved cells containing in-situ generated white phosphorus and arsenic were employed to achieve high optical quality GaInAsP layers on InP and GaAs. Laser diode performance will also be discussed.

机译：摘要表格仅给出。用所有固体源MBE获得可再现的AS / P化学计量生长。含有原位产生的白色磷和砷的瓣膜瓣膜用于在INP和GaAs上实现高光学质量的GaIsasp层。还将讨论激光二极管性能。

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《Lasers and Electro-Optics Society Annual Meeting》|1994年||共1页
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Baillargeon J.N.; Cho A.Y.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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1. A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth [J] . Mikhail A Putyato, Valerii V Preobrazhenskii, Boris R Semyagin, Semiconductor science and technology . 2009,第5期

机译：InP热分解的带阀裂化磷束源及其在MBE生长中的应用
2. The effect of elastic strain on the optical properties of InGaP/GaAs grown using a valved phosphorus cracker cell in solid source MBE [J] . Yoon SF., Zheng HQ., Mah KW. Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 1998,第1a2期

机译：弹性应变对有阀磷裂化电池在固体源MBE中生长的InGaP / GaAs光学性能的影响
3. Solid source molecular beam epitaxial growth of In_(0.48)Ga_(0.52)P on GaAs substrates using a valved phosphorus cracker cell [J] . S. F. Yoon, K. W. Mah, H. Q. Zheng The European physical journal. Applied physics . 1999,第2期

机译：使用带阀磷裂解池在GaAs衬底上固相源分子束外延生长In_（0.48）Ga_（0.52）P
4. Reproducible Growth Of High Quality Lattice Matched Gainasp On InP By Solid Source MBE Using Phosphorus And Arsenic Valved Cracking Cells [C] . Baillargeon, J.N., Cho, . 1994

机译：固体源MBE使用磷和砷阀裂化细胞在InP上可再生地生长高质量晶格匹配的Gainasp
5. Metal organic vapor phase epitaxy growth and electrical characterization of high-resistivity and lattice-mismatched indium-arsenic-phosphorus and aluminum-indium-arsenic-phosphorus buffer layers for indium arsenide and indium phosphide device application. [D] . Bui, Steven Sontung. 2008

机译：用于砷化铟和磷化铟器件的高电阻率和晶格失配的铟砷磷和铝铟砷磷缓冲层的金属有机气相外延生长和电学表征。
6. Superlattice Growth via MBE and Green’s Function Techniques [O] . JJ Ramsey, Ernian Pan, Peter W Chung, 2010

机译：通过MBE和Green的功能技术实现超晶格生长
7. All solid source molecular beam epitaxy growth of GaxIn1-xAsyP1-y lasers using phosphorus and arsenic valved cracking cells [O] . J. N. Baillargeon 2012

机译：GaxIn1-xAsyP1-y激光器的全固态源分子束外延生长，使用磷和砷阀裂化池
8. Phase Diagram for LPE Growth of GaInAsP Layers Lattice Matched to InP Substrates [R] . Hsieh, J. J. 1980

机译：与Inp衬底匹配的GaInasp层的LpE生长的相图

Solid source MBE growth of lattice matched GaInAsP with phosphorus and arsenic valved cracking cells

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