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首页> 外文会议>Lasers and Electro-Optics Society Annual Meeting >Theoretical investigation of J/sub th/ and /spl eta//sub d/ vs. cavity length for InGaAsP/GaAs high power lasers
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Theoretical investigation of J/sub th/ and /spl eta//sub d/ vs. cavity length for InGaAsP/GaAs high power lasers

机译：INGAASP / GAAs高功率激光器J / SUB / AND / SPL ETA / SUP D / SPTEA / SUP D / Vs腔长度的理论研究

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InGaAsP/GaAs materials are currently attracting attention for potentially reliable high-power SCH-SQW laser fabrication for 0.98 and 0.8 /spl mu/m range. Scattered points show experimental results for variation of J/sub th/ and /spl eta//sub d/ vs. cavity length respectively, for lasers with different thicknesses of quantum well active layer. These features were evidenced with high reproducibility for more than 40 laser structures. These laser characteristics show anomalously strong cavity length dependence for the lasers with short cavity that cannot be explained by theoretical models used for AlGaAs lasers. The authors present new theoretical models enabling them to explain these effects. The work shows that the major factor governing the behavior of J/sub th/ and /spl eta//sub d/ of the InGaAsP/GaAs laser for a short cavity is the leakage current due to excess carriers from the waveguide layer to p-type cladding layer. The leakage current in InGaAsP/GaAs lasers is much larger than that of AlGaAs lasers due to a relatively low InGaP cladding layer band gap. Therefore a new, more sophisticated method to calculate the leakage current accurately is needed. Improved accuracy was obtained by incorporating the electric field in the cladding layer with enough accuracy for calculating the current from the drift-diffusion approximation while the electric field was obtained from the Poisson equation with physical consideration of its boundary values and approximate excess carrier density distribution in the cladding layer.
机译：的InGaAsP /砷化镓材料目前受到关注用于潜在可靠的高功率SCH-SQW激光器制造为0.98和0.8 / SPL亩/米的范围内。散点分别显示了焦耳/子TH /和/ SPL ETA //子d /对腔长度的变化的实验结果，对于具有量子阱有源层的不同的厚度激光器。这些特征被以高再现性超过40层激光器结构证明。这些激光特性表示异常强与短腔激光器不能被用于的AlGaAs激光器的理论模型进行说明空腔长度的依赖。作者提出了新的理论模型，使他们能够解释这些效果。的工作表明，理事焦耳/子TH /和/ SPL ETA //子d /所述的InGaAsP /砷化镓激光器要短腔的行为的主要因素是漏电流由于从波导层以对 - 过量载流子型包覆层。在的InGaAsP /砷化镓激光器的漏电流比的AlGaAs激光器的大得多由于相对低的InGaP包层的带隙。因此，需要精确地计算漏电流一个新的，更复杂的方法。通过配合在具有足够精确度的包层中的电场，用于计算从所述漂移扩散近似的电流，同时从泊松方程与它的边界值的物理考虑和近似过剩载流子密度分布获得的电场而获得改善的准确度包覆层。

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