High reliability, high performance 1300 nm, 1480 nm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

机译：高可靠性，高性能1300nm，1480nm增强/ Inp栅格 - Sch紧张层量子孔孔

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Summary form only given. Strained-layer quantum well lasers have been demonstrated to have low threshold current and high differential quantum efficiency. In this paper, we describe low threshold current and high temperature operations of 1300 nm lasers for fiber in the loop application and extremely high power 1480 nm lasers for pumping sources of Er-doped fiber amplifiers. Reliability tests of these lasers are also described.

机译：摘要表格仅给出。已经证明了应变层量子阱激光器具有低阈值电流和高差分量子效率。在本文中，我们描述了在环路应用中的光纤中1300nm激光器的低阈值电流和高温操作，以及极高的功率1480nm激光器，用于泵送ER掺杂光纤放大器的源。还描述了这些激光器的可靠性测试。

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《Lasers and Electro-Optics Society Annual Meeting》|1994年||共2页
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Kasukawa A.; Namegaya T.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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专利

1. Effects of well number in 1.3-/spl mu/m GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers [J] . Namegaya T., Matsumoto N. IEEE Journal of Quantum Electronics . 1994,第2期

机译：1.3- / splμm/ m GaInAsP / InP GRIN-SCH应变层量子阱激光器中阱数的影响
2. GRIN-SCH AlGaInAs/InP quantum-well lasers emitting at 1300 nm [J] . Ash R.M., Robbins D.J. Electronics Letters . 1989,第22期

机译：GRIN-SCH AlGaInAs / InP量子阱激光器在1300 nm处发射
3. High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy [J] . Savolainen P., Toivonen M. IEEE Photonics Technology Letters . 1996,第8期

机译：所有固体源分子束外延生长的高性能980 nm应变层GaInAs-GaInAsP-GaInP量子阱激光器
4. High reliability, high performance 1300 nm, 1480 nm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers [C] . Kasukawa, A., Namegaya, . 1994

机译：高可靠性，高性能1300 nm，1480 nm GaInAsP / InP GRIN-SCH应变层量子阱激光器
5. GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers [D] . 宮本恭幸. 1988

机译：用于量子盒激光器的GaInAsP / InP有机金属气相外延（OMVPE）
6. All-Optical Fiber Hanbury Brown Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot [O] . G. Muñoz-Matutano, D. Barrera, C.R. Fernández-Pousa, -1

机译：全光纤Hanbury Brown＆Twiss干涉仪研究变质InAs量子点的1300 nm单光子发射
7. GaInAsP/InP quantum wire lasers [O] . Arai, Shigehisa, Maruyama, Takeo 2009

机译：GaInasp / Inp量子线激光器
8. Very High Efficiency GaInAsP/GaAs Strained-Layer Quantum Well Lasers(Lambda=980nm) With GaInAsP Optical Confinement Layers. (Reannouncement with New Availability Information) [R] . Groves, S. H., Walpole, J. N., Missaggia, L. J. 1992

机译：具有GaInasp光学限制层的超高效GaInasp / Gaas应变层量子阱激光器（Lambda = 980nm）。（重新公布新的可用性信息）

High reliability, high performance 1300 nm, 1480 nm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

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