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High quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabricated using photo-absorption induced disordering

机译：高质量波长调谐多量子井GAINAS / GAISASP激光器使用光吸收诱导性感制造

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Oxide stripe lasers have been fabricated from GaInAs/GaInAsP multi-quantum well material which has undergone various degrees of intermixing by photoabsorption induced disordering (PAID). Blue shifts of up to 160 nm in the lasing spectra are demonstrated.

机译：氧化物条纹激光器已由Gainas / GaIsasp多量子阱材料制造，该孔材料经过光吸收诱导的性症（PAD）经历了各种沉想。对激光光谱的蓝色偏移高达160nm。

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《Lasers and Electro-Optics Society Annual Meeting》|1994年||共2页
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McKee A.; McLean C.J.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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专利

1. High static performance GaInAs-GaInAsP SCH MQW 1.5 mu m wavelength buried ridge stripe lasers [J] . Kazmierski C., Ougazzaden A. IEEE Journal of Quantum Electronics . 1991,第6期

机译：高静态性能GaInAs-GaInAsP SCH MQW 1.5微米波长掩埋脊条纹激光器
2. Carrier-induced differential refractive index in GaInAsP-GaInAs separate confinement multiquantum well lasers [J] . Jacquet J., Brosson P. IEEE Photonics Technology Letters . 1990,第9期

机译：GaInAsP-GaInAs分离禁闭多量子阱激光器中的载流子诱导的折射率差
3. Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiquantum well structures [J] . Lullo G., McKee A. Electronics Letters . 1994,第19期

机译：使用激光无序GaInAs / GaInAsP多量子阱结构制造电吸收光调制器
4. High quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabricated using photo-absorption induced disordering [C] . McKee, A., McLean, . 1994

机译：使用光吸收诱导的无序制造的高质量波长调谐多量子阱GaInAs / GaInAsP激光器
5. 1.5--1.6μm Wavelength GaInAsP/InP Injection Lasers [D] . 荒井滋久. 1982

机译：1.5--1.6μm波长GaInAsP / InP注入激光器
6. Wavelength shifting of intra-cavity photons: Adiabatic wavelength tuning in rapidly wavelength-swept lasers [O] . Christian Jirauschek, Robert Huber 2015

机译：腔内光子的波长移位：快速波长扫描激光器中的绝热波长调谐
7. Structural and compositional control of the output wavelength of very high power 0.98 µm GaInAs lasers for pumping fiber amplifiers [O] . Chen T. R., Zhuang Y. H., Marshall W. K., 1991

机译：用于泵浦光纤放大器的0.98 µm高功率GaInAs激光器输出波长的结构和成分控制

High quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabricated using photo-absorption induced disordering

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