DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range

机译：DFWM在中红外IR范围内的半导体中的双光子自由载波的反射率

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It's shown that the effect of two-photon free carrier generation (TFCG) in semiconductors is the most promising for achieving high DFWM reflectivities R with short enough decay time tau in wavelength range from 1.5 to greater than 9.5 micrometers. The materials which allow us to achieve R up to 100% with tau of order of nanoseconds for the range of interest are presented. Some specific features of DFWM via TFCG were studied experimentally in InSb at lambda equals 10.6 micrometers and in Ge at lambda equals 2.94 micrometers.

机译：结果表明，二光子自由载体生成（TFCG）在半导体中的效果是实现高DFWM反射率R的最有希望，其具有足够短的衰减时间TAU，波长范围为1.5至大于9.5微米。展示了允许我们达到100％的材料，纳入纳秒的纳秒达到100％，以获得感兴趣的范围。通过TFCG在Lambda的INSB中实验研究DFWM的一些特定特征等于10.6微米，在Lambda等于2.94微米。

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《Conference on phase conjugation and adaptive optics》|1996年||共10页
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A.E. Vidavskii; Valeri I. Kovalev; V.M. Raukhman;
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中图分类自动化技术、计算机技术;
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1. Free Carrier Generation in Semiconductors Induced by Absorption of Sub-Band Gap Light. A Photoelectrochemical Study with Nanoporous GaP [J] . D. Vanmaekelbergha, M. A. Hamstra, L. van Pieterson The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 1998,第41期

机译：子带隙光的吸收在半导体中产生自由载流子。纳米多孔GaP的光电化学研究
2. Free Carrier Generation in Semiconductors Induced by Absorption of Sub-Band Gap Light. A Photoelectrochemical Study with Nanoporous GaP [J] . D. Vanmaekelbergh, M. A. Hamstra, L. van Pieterson The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 1998,第41a44期

机译：子带隙光的吸收在半导体中产生自由载流子。纳米多孔GaP的光电化学研究
3. Free-carrier generation by two-photon resonant excitation to the excitonic states in cuprous oxide [J] . Naka N., Akimoto I., Shirai M. Physica status solidi, B. Basic research . 2013,第9期

机译：通过双光子共振激发生成氧化亚铜中激子态的自由载流子
4. DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range [C] . A.E. Vidavskii, P.N. Lebedev Physics Institute, Moscow, Laser Optics '95: Phase Conjugation and Adaptive Optics . 1996

机译：在中红外范围内的半导体中通过双光子自由载流子产生的DFWM反射率
5. Transport characteristics of amorphous semiconductors in the dilute carrier regime: A variable range hopping treatment. [D] . Dari, Naseer Abdulhamid. 2010

机译：稀载流态中非晶半导体的传输特性：可变范围跳跃处理。
6. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging [O] . K. Alberi, B. Fluegel, H. Moutinho, -1

机译：通过光致发光成像测量跨多晶半导体中多个晶粒的远程载流子扩散
7. Minority-carrier dynamics in semiconductors probed by two-photon microscopy [O] . Gaury, Benoit, Haney, Paul M. 2016

机译：半光子探测的少数载流子动力学由双光子探测显微镜
8. Polarization Dependence of the Free Carrier Reflectivity of Heavily Doped Semiconductors, [R] . esposito,robert j. muldawer,leonard 1974

机译：重掺杂半导体自由载流子反射率的偏振依赖性，

DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range

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