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Characterisation results of the CMOS VISNIR spectral band detector for the METimage instrument

机译：METimage仪器的CMOS VISNIR光谱检测器的表征结果

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摘要

The METimage instrument is part of the EPS-SG (EUMETSAT Polar System Second Generation) program. It will be situated on the MetOp-SG platform which in operation has an objective of collecting data for meteorology and climate monitoring as well as their forecasting. Teledyne e2v has developed and characterised the CMOS VISNIR detector flight module part of the METimage instrument. This paper will focus on the silicon results obtained from the CMOS VISNIR detector flight model. The detector is a large multi-linear device composed of 7 spectral bands covering a wavelength range from 428 nm to 923 nm (some bands are placed twice and added together to enhance the signal-to-noise performance). This detector uses a 4T pixel, with a size of 250μm square, presenting challenges to achieve good charge transfer efficiency with high conversion factor and good linearity for signal levels up to 2M electrons and with high line rates. Low noise has been achieved using correlated double sampling to suppress the read-out noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. The photodiode occupies a significant fraction of the large pixel area. This makes it possible to meet the detection efficiency when front illuminated. A thicker than standard epitaxial silicon is used to improve NIR response. However, the dielectric stack on top of the sensor produces Fabry-Perot etalon effects, which are problematic for narrow band illumination as this causes the detection efficiency to vary significantly over a small wavelength range. In order to reduce this effect and to meet the specification, the silicon manufacturing process has been modified. The flight model will have black coating deposited between each spectral channel, onto the active silicon regions.
机译：METimage仪器是EPS-SG（第二代EUMETSAT极地系统）程序的一部分。它将位于MetOp-SG平台上，该平台的运行目标是收集气象，气候监测及其预测的数据。 Teledyne e2v已开发并表征了METimage仪器的CMOS VISNIR检测器飞行模块部分。本文将重点介绍从CMOS VISNIR检测器飞行模型获得的硅结果。该检测器是一个大型多线性设备，由覆盖428 nm至923 nm波长范围的7个光谱带组成（某些光谱带放置两次并加在一起以增强信噪性能）。该检测器使用尺寸为250μm见方的4T像素，对于要获得高达2M电子和高线速的信号电平，具有高转换因子和良好的线性度，要实现良好的电荷转移效率提出了挑战。使用相关的双重采样来抑制读出噪声并提供比标准商用设备明显更大的最大动态范围已实现了低噪声。光电二极管占大像素面积的很大一部分。这使得可以满足在前照明时的检测效率。使用比标准外延硅厚的材料来改善NIR响应。但是，传感器顶部的电介质堆栈会产生Fabry-Perot标准具效应，这对于窄带照明是个问题，因为这会导致检测效率在较小的波长范围内发生明显变化。为了减少这种影响并满足规格要求，对硅制造工艺进行了修改。飞行模型将在每个光谱通道之间沉积黑色涂层，并沉积到有源硅区域上。

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