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首页> 外文会议>Conference on optoelectronic interconnects, integrated circuits, and packaging >Optical Transceiver on Silicon with Self-Aligned Laser-Diode
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Optical Transceiver on Silicon with Self-Aligned Laser-Diode

机译：硅的光收发器与自对准激光二极管

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An optical transceiver is presented consisting of a polarization insensitive directional coupler, a hybrid integrated selfaligned laser diode and a hybrid integrated photo diode. In order to increase waveguide-fiber coupling, the fiber is connected to a tapered waveguide. The polarization insensitive directional coupler is designed for separation of the transmitting (λ = 1.3 μm) and the receiving (λ = 1.55 μm) wavelengths. The coupler is based on Al_2O_3-waveguides realized by MOPECVD-processes. These waveguides show attenuation below 0.3 dB/cm at the wavelengths of interest after annealing at ～700°C. The hybrid integration of the laser diode is realized by a self-aligned soldiering process. Electroplated tin/gold is used as the solder, while the pre-positioning of the laser diode is achieved by a fine-placed. After self-alignment, the misalignment of the laser has to be smaller than ±0.5 μm vertical and ±1.5 μm lateral to achieve coupling losses below 3 dB. Vertical mirrors are used for guiding the signal on the chip to reduce optical losses and chip size. The waveguide-fiber coupling is optimized by a tapered waveguide during the deposition of the Al_2O_3-layer by a KOH-etched siliconmask. The lateral positioning of the fiber is guaranteed by the vertically etched walls of the waveguide improving the properties of the coupling facet. The depth of the fiber groove is machined by an isotropic silicon plasma etch process.
机译：呈现光学收发器，其由偏振不敏感方向耦合器，混合集成的自负激光二极管和混合集成光电二极管组成。为了增加波导 - 光纤耦合，光纤连接到锥形波导。偏振不敏感定向耦合器设计用于分离透射（λ=1.3μm）和接收（λ=1.55μm）波长。耦合器基于由MoPecVD-Processive实现的AL_2O_3-波导。这些波导在〜700℃的退火后，在感兴趣的波长下显示低于0.3dB / cm的衰减。通过自排列的士兵来实现激光二极管的混合集成。电镀锡/金用作焊料，而激光二极管的预定位通过精细放置来实现。自对准之后，激光的未对准必须小于±0.5μm垂直±0.5μm横向，以实现3 dB以下的耦合损耗。垂直镜用于引导芯片上的信号，以减少光学损耗和芯片尺寸。通过KOH蚀刻硅掩模在Al_2O_3层的沉积期间通过锥形波导优化波导光纤耦合。通过波导的垂直蚀刻的壁改善了联接刻面的性质，纤维的横向定位是保证的。纤维槽的深度由各向同性硅等离子体蚀刻工艺加工。

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