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首页> 外文会议>Conference on Nanostructure Integration Techniques for Manufacturable Devices, Circuits, and Systems: Interfaces, Interconnects, and Nanosystems >Controlling the Spontaneous Emission Rate of Single Quantum Dots in a 2D Photonic Crystal
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Controlling the Spontaneous Emission Rate of Single Quantum Dots in a 2D Photonic Crystal

机译：控制2D光子晶体中单量子点的自发发射率

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摘要

We report on single photon sources produced from photonic crystal - coupled InAs Quantum Dots (QDs). We observe large spontaneous emission rate modification of individual InAs Quantum Dots (QDs) in modified single defect cavities with large quality factor (Q). Compared to QDs in bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase by up to a factor of 8. In contrast, off-resonant QDs indicate up to five-fold rate quenching as the local density of optical states (LDOS) is diminished in the photonic crystal. In both cases we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using Finite Difference Time Domain (FDTD) simulations and find good agreement with experiment. High multiphoton suppression is achieved by resonant excitation. Finally, we discuss fabrication improvements based on FDTD analysis of already fabricated structures.
机译：我们报告了光子晶体耦合INAS量子点（QDS）产生的单光子源。我们在具有大质量因数（Q）的改进的单缺陷腔中，观察各个INAS量子点（QDS）的大型自发排放率修改。与桶中的QDS中的QDS，与腔腔共振的QD显示发射率高达8倍。相反，偏离谐振QDS显示为最多五倍的速率淬火作为光学状态的局部密度（ LDOS）在光子晶体中减小。在这两种情况下，我们展示了光子抗血清，表明该结构表示按需单光子源，脉冲持续时间从210pe到8 ns。我们用有限差分时域（FDTD）模拟来解释抑制QD发射率，并与实验找到良好的协议。通过共振激发实现高多孔抑制。最后，我们讨论了基于已经制造的结构的FDTD分析的制造改进。

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