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Dark Current and DQE Improvements of Mercuric Iodide Medical Imagers

机译:暗流和DQE的Mercuric Iodide医疗成像仪的改进

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A new TFT array has been developed specifically for mercuric iodide (HgI_2) deposition. This new TFT array combined with a modified HgI_2 Physical Vapor Deposition (PVD) process provides less than 10 Pa/mm~2 dark current at room temperature (22°C) measured at 1 V/μm electrical field. This photoconductor (direct) imager was run at 10 fr/s framerate and gave a measured sensitivity of 19 μC/(R~*cm~2) using a RQA5 radiation quality x-ray beam (70kVp x-ray with 21 mm Al filtering). This sensitivity value is higher than the sensitivity reported by our group for any previous HgI_2 imagers. MTF, NPS and DQE values were also evaluated on this 13 cm × 13 cm size imager with 127 μm pixel pitch. The MTF value is higher than 40% at the Nyquist frequency (3.9 lp/mm). This is much better than the MTF of a 600 urn CsI scintillator/photodiode (indirect) imager, which is only 16% (Varian internal data) and it is similar to the MTF value of the a-Se (another photoconductor) imagers. The first frame image lag is less than 8% when the imager was run at a 10 fr/s framerate. The low dark current and some noise reduction in the detector electronics, made it possible for the DQE to be measured down to low fluoroscopic dose levels ( < 4 μR/fr). The DQE(0) value is over 50% at a dose of 35 μR/fr and still about 40% at 3.76 μR/fr. The 270 μm thick PVD HgI_2 layer only absorbs less than 75% of the ~51 keV mean energy X-ray photons (70 kVp RQA5 filtered beam). This means that if the thickness of the HgI_2 layer is increased to 500 μm (increasing the absorption up to over 90%) the DQE(0) should then increase to about 60- 65% (assuming everything else remains unchanged). This value is close to the 65 - 70 % DQE(0), measured for the indirect (CsI) imagers at higher doses. Such a high DQE value makes this material competitive both for fluoroscopic and for radiographic applications.
机译:已经专为Mercuric碘化物(HGI_2)沉积而开发了一种新的TFT阵列。该新型TFT阵列与改进的HGI_2物理气相沉积(PVD)工艺组合在1V /μm电场下测量的室温(22℃)提供小于10Pa / mm〜2暗电流。该光电导体(直接)成像器在10fr / s帧间运行,使用RQA5辐射质量X射线束(70kVP X射线,21mm Al滤波,测量为19μC/(R〜* cm〜2)的测量灵敏度)。这种敏感值高于我们对任何以前的HGI_2成像仪报告的灵敏度。还在具有127μm像素间距的13cm×13cm尺寸的成像器上评估MTF,NPS和DQE值。 MTF值在奈奎斯特频率(3.9磅/mm)处高于40%。这优于600瓮CSI闪烁体/光电二极管(间接)成像器的MTF,其仅为16%(Varian内部数据),类似于A-SE(另一光导体)成像器的MTF值。当成像器在10FR / S帧中运行时,第一帧图像滞后小于8%。检测器电子器件的低暗电流和一些降噪,使DQE能够测量到低荧光透视剂量水平(<4μR/ FR)。 DQE(0)值以35μR/ FR的剂量超过50%,仍然在3.76μR/ Fr下仍然约为40%。 270μm厚的PVD HGI_2层仅吸收小于〜51KeV的75%的〜51keV的平均能量X射线光子(70 kVP RQA5过滤梁)。这意味着如果Hgi_2层的厚度增加到500μm(增加吸收超过90%),则DQE(0)则应增加至约60-65%(假设其他一切保持不变)。该值接近于65-70%DQE(0),测量为较高剂量的间接(CSI)成像器。这种高DQE值使这种材料竞争荧光透视和用于放射线照相应用。

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