Electrical domains and sub-millimeter signal generation in AlGaN/GaN superlattices

机译：AlGaN / GaN Supertrices中的电域和亚毫米信号产生

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The paper discusses the feasibility of a terahertz-signal source made of AlGaN/GaN superlattice. Negative differential conductivity, electrical domain formation, current oscillations, and power efficiency of a perspective source are described. We relate the superlattice geometry and conduction band profile, distorted by polarization fields, to the oscillation frequency and power efficiency of the device. We also determine the optimal Al content, superlattice period, and the parameters of external circuit that favor sub-millimeter wave generation.

机译：本文讨论了由AlGaN / GaN超晶格制成的太赫兹信号源的可行性。描述了透视源的负差导电性，电域形成，电流振荡和功率效率。我们将超晶格几何和传导频段曲线（通过偏振磁场扭曲）涉及偏振场，振荡频率和设备的功率效率。我们还确定最佳的Al含量，超晶格周期和有利于亚毫米波产生的外部电路参数。

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《Conference on Terahertz Physics, Devices, and Systems》|2006年||共9页
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I. Gordion; A. Manasson; V.I. Litvinov; SPIE-The International Society for Optical Engineering;
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正文语种
中图分类频率合成技术、频率合成器;
关键词
superlattices; submillimeter wave oscillators;

机译：超晶格;亚颌胶波振荡器;

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专利

1. Electrical Domains and Submillimeter Signal Generation in AlGaN/GaN Superlattices [J] . Irina Gordion, Alexander Manasson, Vladimir I. Litvinov IEEE Transactions on Electron Devices . 2006,第6期

机译：AlGaN / GaN超晶格中的电域和亚毫米级信号生成
2. Improved electrical properties in AlGaN/GaN heterostructures using AlN/GaN superlattice as a quasi-AlGaN barrier [J] . Y. Kawakami, A. Nakajima, X. Q. Shen, Applied Physics Letters . 2007,第24期

机译：使用AlN / GaN超晶格作为准AlGaN势垒的AlGaN / GaN异质结构中改善的电性能
3. The influence of A1N interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates [J] . Lei Li, Lei LiuLei, Wang, Applied Physics . 2012,第4期

机译：AlN中间层对在GaN /蓝宝石模板上生长的p型AlGaN / GaN超晶格的微观结构和电学性质的影响
4. Electrical domains and sub-millimeter signal generation in AlGaN/GaN superlattices [C] . I. Gordion, A. Manasson, V.I. Litvinov Terahertz Physics, Devices, and Systems; Proceedings of SPIE-The International Society for Optical Engineering; vol.6373 . 2006

机译：AlGaN / GaN超晶格中的电域和亚毫米级信号生成
5. Impact of electrically and thermally induced physical defects on the reliability of AlGaN/GaN high electron mobility transistors. [D] . Holzworth, Monta Raymond, Jr. 2013

机译：电和热感应物理缺陷对AlGaN / GaN高电子迁移率晶体管的可靠性的影响。
6. Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure [O] . Ying Zhao, Shengrui Xu, Hongchang Tao, 2021

机译：Mg Delta掺杂AlGaN / GaN超晶格结构增强了P型GaN电导率
7. Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes [O] . Hogyoung Kim, Seok Choi, Byung Joon Choi 2020

机译：AlN和GaN脉冲比在热原子层沉积AlGaN上的影响AlGaN in AlGaN / GaN肖特基二极管电学性能
8. Terahertz Generation in GaN/AlGaN Superlattices [R] . Morkoc, H. 2009

机译：GaN / alGaN超晶格中的太赫兹生成

Electrical domains and sub-millimeter signal generation in AlGaN/GaN superlattices

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