A low-power MOSFET-only voltage reference circuit is proposed which compensates for the temperature dependence of a proportional-to-absolute-temperature (PTAT) voltage generated by a pair of MOS devices working in the subthreshold region with a gate-to-source voltage of an MOS transistor operating in the same region. The voltage reference circuit, designed for a standard 0.6μm CMOS process, has been used in a low dropout voltage regulator (LDO). The circuit features good temperature stability i.e. 37.4ppm/°C over the range from -40°C to 120°, the supply voltage is 1.4V-5.5V and the quiescent current is 4μA.
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