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首页> 外文会议>CPES Annual Power Electronics Conference >Evaluation of the Switching Characteristics of a Gallium-Nitride Transistor and Silicon Diode Switching Pair
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Evaluation of the Switching Characteristics of a Gallium-Nitride Transistor and Silicon Diode Switching Pair

机译：评估氮化镓晶体管和硅二极管切换对的切换特性

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GaN technology for power conversion is maturing, therefore there is a growing need to evaluate capabilities of high switching frequency and elevated ambient temperature operation of GaN devices. These capabilities may particularly benefit systems constrained by strict EMI standards, leading to significant size and weight reduction. An inductive load tester circuit has been developed for switching characterization of a GaN transistor (EPC1010) and a paired silicon diode (SBR10U200P5). Maximum measured switching speeds for hard switching turn-on and turn-off transitions were dv/dt_((on)) = 4 V/ns, di/dt_((on)) = 4.5A/ns, and dv/dt_((off)) = 18 V/ns, di/dt_((off)) = 5 A/ns respectively. Total measured switching energy loss was E_(tot) = 40μJ under 100 V supply voltage and 15 A load current conditions. Zero-voltage switching reduced loss to only E_(tot) = 6μJ, thus enabling high switching frequency operation. Switching performance changed little with increase of transistor junction temperature from 25°C to 100°C.
机译：GaN技术用于电力转换是成熟的，因此越来越需要评估GaN器件的高开关频率和升高的环境温度操作的能力。这些能力可能特别有利于严格的EMI标准限制的系统，导致大小和减轻重量。已经开发了一种感应负载测试器电路，用于切换GaN晶体管（EPC1010）和配对硅二极管（SBR10U200P5）的表征。硬开启开启和关闭转换的最大测量切换速度是DV / DT _（（ON））= 4 V / NS，DI / DT _（（ON））= 4.5A / NS和DV / DT _（（关闭）））= 18 v / ns，di / dt _（（关闭））= 5 a / ns。总测量的切换能量损失是E_（TOT）=40μJ在100 V电源电压和15个负载电流条件下。零电压切换仅降低损耗E_（TOT）=6μj，从而实现高开关频率操作。随着25°C至100°C的晶体管结温增加，切换性能几乎没有变化。

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