In present electric vehicles (PHEV/HEV/EV), an extra cooling loop is needed to lower the power-electronics coolant temperature below about 65°C from the radiator coolant temperature of 105°C. One way to reduce the cost of future electric vehicles is to eliminate the extra cooling loop by developing reliable high-temperature power inverter modules that can be cooled directly from the radiator coolant. Although, new wide band gap (WBG) devices, like SiC or GaN, with higher rated operating temperatures are slowly becoming more available, the added device cost still remains a barrier to integration. This demands a set of power packaging technologies that can enable silicon power semiconductor devices to reliably work at junction temperatures in excess of 175°C. In our research effort, we focused on design and fabrication of a thin planar structure that utilizes the emerging low-temperature joining technology (LTJT) of nanosilver paste to maximize surface area for cooling from both sides and enable high temperature operation of the power semiconductor devices.
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机译：在本电动车辆（PHEV / HEV / EV）时，需要额外的冷却回路，从105℃的散热器冷却液温度降低低于约65℃的功率电子冷却剂温度。减少未来的电动汽车的成本的一种方式是通过逆变器可以直接从散热器的冷却剂被冷却的模块开发可靠的高温功率，以消除多余的冷却回路。尽管新的宽的带隙（WBG）设备，如碳化硅或GaN，具有较高的额定工作温度慢慢变得更可用的，所添加的设备成本仍然是一个障碍集成。这就要求一组功率封装技术，可以在结温度超过175℃使硅功率半导体器件可靠地工作。在我们的研究工作中，我们集中在利用新兴的低温接合技术（LTJT）纳米银糊以最大化表面积为从两侧冷却，使功率半导体器件的高温动作的薄的平面结构的设计和制造。
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