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首页> 外文会议>SPIE Conference on Oxide-Based Materials and Devices >Physical properties of MgZnO film grown by RF magnetron sputtering using ZnO/MgO (80/20 wt ) target
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Physical properties of MgZnO film grown by RF magnetron sputtering using ZnO/MgO (80/20 wt ) target

机译：使用ZnO / MgO（80/20wt％）靶法（80/20wt％）靶溅射的Mgzno薄膜的物理性质

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摘要

This work investigates the physical properties of the Mg_xZn_(1-x)O films. Mg_xZn_(1-x)O films were deposited by RF magnetron sputtering system using a 6 inch ZnO/MgO (80/20 wt%) target. The XPS, Hall measurement, and transparent performance are measured. The XPS results show that there is high Carbon element content on the surface of Mg_xZn_(1-x)O maybe due to the contamination and the average of the Mg content is about 25 at. %. The XRD results indicate that the appearance of only (111) peaks for as-grown Mg_xZn_(1-x)O film is a sign of the cubic single phase. In this study, the Mg_xZn_(1-x)O film show high transparency with transmittances over 90 % in the visible region (400 ～ 700nm) and the sharp absorption edge is visible in UV region due to the Mg content. Therefore, the Hall measurement of Mg_xZn_(1-x)O films which were deposited at lower RF power show the higher doping concentration, the lower resistivity and higher mobility as a function of the annealing temperatures. The experimental results indicate that Mg_xZn_(1-x)O film with 800°C annealing contains more oxygen vacancies which play the role of donor. Since oxygen vacancies generate states in the band gap and cause an increase in conductivity.
机译：该工作调查MG_XZN_（1-X）O膜的物理性质。使用6英寸ZnO / MgO（80/20wt％）靶通过RF磁控溅射系统沉积MG_​​XZN_（1-X）O膜。测量XPS，霍尔测量和透明性能。 XPS结果表明，Mg_XZN_（1-x）O的表面上有高碳元素含量可能是由于污染，Mg含量的平均值约为25。 ％。 XRD结果表明，仅用于生长MG_XZN_（1-X）O膜的仅（111）峰值的外观是立方单相的标志。在该研究中，Mg_xzn_（1-x）O膜在可见区域（400〜700nm）中具有超过90％的透射率高透明度，并且由于Mg含量，在UV区域中可见清晰的吸收边缘。因此，在较低RF功率下沉积的Mg_XZN_（1-X）O膜的霍尔测量显示出较高的掺杂浓度，较低的电阻率和较高的迁移率，作为退火温度的函数。实验结果表明，具有800°C退火的Mg_xzN_（1-x）O膜含有更多的氧空位，其发挥供体的作用。由于氧气空缺在带隙中产生状态并导致导电性增加。

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