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首页> 外文会议>International Conference on Manufacturing Science and Technology >Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications
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Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications

机译：通过脉冲激光沉积产生光伏应用的锗 - 硅量子点

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Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-tooperate technology was developed to fabricate germanium-silicon quantum dots in a SiO_x matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3～4 nm embedded in the amorphous SiO_x layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiO_x matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.
机译：在太阳能电池中施加的量子点将非常重要，以提高量子隧道效率并改善光源电流运输。在这项研究中，开发了一种新的易于脚趾技术，以在SiO_x矩阵中制造锗 - 硅量子点。使用脉冲激光沉积技术首先通过第一沉积的锗的锗的SiO形成量子点，然后在相对高的温度下退火。我们已经证明了一种稳定和低成本的制造过程，其比外延方法便宜得多，以提供高密度锗 - 硅量子点的制造。清楚地观察到嵌入在非晶SiO_x层中的直径为3〜4nm的量子点。表征了薄膜的形态学特征。通过拉曼光谱，光致发光谱和XRD测试进行光学性质，以验证SiO_x矩阵中量子点的结晶。反射光谱显示在300nm至1200nm的光谱区域中的高光吸收速率，证明锗 - 硅量子点具有希望用作光伏应用的吸收器的有希望的特征。

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