A MODEL OF TRANSINET RESPONSE OF SEMICONDUCTOR GAS SENSOR CONSIDERING TEMPERATURE DEPENDENCY OF CARRIER MOBILITY

机译：考虑载流子迁移率温度依赖性的半导体气体传感器瞬态响应模型

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A model of transient response of semiconductor gas sensor was improved by considering temperature dependency of carrier mobility in Sn02 gas sensor. The model is useful for analysis of transient response of the sensor. Improvements of accuracy of the model have been desired to express the difference of the calculated sensor outputs between the kinds of gases for classifying the kind of gases. The model which considers the temperature dependency of carrier mobility has been newly constructed. The sensor output calculated by new model was a close result by the experiment. Gas classification will be realized by using the model together with activation energy dependence of the sensor output.

机译：通过考虑SN02气体传感器中的载流子迁移率的温度依赖性，改善了半导体气体传感器的瞬态响应模型。该模型可用于分析传感器的瞬态响应。希望改进模型的精度，以表达计算的传感器输出在用于对气体种类进行分类的种类之间的差异。考虑了载流动性温度依赖性的模型已经新建。新模型计算的传感器输出是实验的紧密结果。通过使用传感器输出的激活能量依赖性，将通过使用模型来实现气体分类。

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《International Conference on Management, Manufacturing and Materials Engineering》|2012年||共3页
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作者
Akira Fujimoto; Masaraitsu Kita;
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中图分类 TB3-532;
关键词
Gas sensor; Transient response; Carrier mobility; Gas classification;

机译：气体传感器;瞬态反应;载体移动性;气体分类;

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1. Dielectric-Semiconductor Interface Limits Charge Carrier Motion at Elevated Temperatures and Large Carrier Densities in a High-Mobility Organic Semiconductor [J] . Vladimirov Ilja, Mueller Sebastian, Baumann Roelf-Peter, Advanced Functional Materials . 2019,第12期

机译：介电体-半导体界面限制了高迁移率有机半导体中温度升高和载流子密度较大时的电荷载流子运动
2. Does the Temperature Dependence of the Charge Carrier Mobility in Disordered Organic Semiconductors at Large Carrier Concentrations Obey the Meyer-Neldel Compensation Law? [J] . I. I. Fishchuk A. K. Kadashchuk* J. Genoe V. N. Poroshin H. BÃ¤sslerd Molecular Crystals and Liquid Crystals . 2011,第1期

机译：大载流子浓度下无序有机半导体中电荷载流子迁移率的温度依赖性是否符合Meyer-Neldel补偿定律？
3. Does the Temperature Dependence of the Charge Carrier Mobility in Disordered Organic Semiconductors at Large Carrier Concentrations Obey the Meyer-Neldel Compensation Law? [J] . I. I. FISHCHUK, A. K. KADASHCHUK, J. GENOE Molecular crystals and liquid crystals . 2011,第535期

机译：大载流子浓度下无序有机半导体中电荷载流子迁移率的温度依赖性是否符合Meyer-Neldel补偿定律？
4. A MODEL OF TRANSINET RESPONSE OF SEMICONDUCTOR GAS SENSOR CONSIDERING TEMPERATURE DEPENDENCY OF CARRIER MOBILITY [C] . Akira Fujimoto, Masamitsu Kita International Conference on Management, Manufacturing and Materials Engineering . 2012

机译：考虑载流子迁移率温度依赖性的半导体气体传感器瞬态响应模型
5. Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method. [D] . Chidambaram, Thenappan. 2015

机译：使用门控霍尔法提取InGaAs金属氧化物半导体结构中的载流子迁移率和界面陷阱密度。
6. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors [O] . Konrad Maier, Andreas Helwig, Gerhard Müller, 2015

机译：水蒸气和表面形态对金属氧化物半导体气体传感器低温响应的影响
7. 5.3.1 High-precise transient response model of semiconductor gas sensor considering temperature dependency of carrier mobility [O] . A. Fujimoto, M. Kita, Y. Katoh 2012

机译：5.3.1考虑载波移动性温度依赖性的半导体气体传感器的高精度瞬态响应模型
8. High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning [R] . Hong, M. 2010

机译：高载流子迁移率InGaas化合物半导体和GaN的高电介质 - 生长，界面结构研究和表面费米能级解旋

A MODEL OF TRANSINET RESPONSE OF SEMICONDUCTOR GAS SENSOR CONSIDERING TEMPERATURE DEPENDENCY OF CARRIER MOBILITY

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