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Effects of annealing and different substrate materials on ohmic contact property of IGZO films

机译：退火和不同底物材料对IGZO薄膜欧姆接触性能的影响

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Amorphous InGaZnO(a-IGZO) films were deposited on the glass substrates with Al/Mo/ITO films separately using magnetron sputtering and photograph methods, to form resistance structures between a-IGZO films and Al/Mo/ITO films.These samples were annealed in the air and N2 ambience in a series of temperature separately.The results show that regardless of N2 or air ambience,samples annealing at 250 degrade,IGZO films show a good ohmic contact characteristic with Al/Mo/ITO materials.And,IGZO films have a better ohmic contact characteristic with ITO/Al than Mo. The transmittance of the IGZO films annealed is better than the transmittance of samples without annealing.And ,the transmittance of samples annealed is rising with the increasing of annealing temperature. Considering the optical and electrical properties of IGZO films, we suggest that 250 centi degrades is a suitable temperature for annealing.
机译：使用磁控溅射和照片方法分别用Al / Mo / ITO膜分别沉积在玻璃基板上，以形成A-IgZO薄膜和Al / Mo / ITO薄膜的抗性结构。这些样品被退火在空中和N2氛围中分别分别进行了一系列温度。结果表明，无论N2或空气环境如何，样品在250降低时退火，IgZo薄膜与Al / Mo / ITO材料显示出良好的欧姆接触特性。，IgZO薄膜使用ITO / Al具有比Mo更好的欧姆接触特性。退火的IGZO膜的透射率优于样品的透射率而不退火。并且，退火的样品的透射率随着退火温度的增加而上升。考虑到IGZO薄膜的光学和电性能，建议250厘米降解是退火的合适温度。

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