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Concentrator Bifacial Crystalline Silicon Solar Cells with Multi-wire Metallization Attached to TCO Layers Using Transparent Conductive Polymers

机译:浓缩器双晶晶体硅太阳能电池,具有多线金属化与TCO层的使用透明导电聚合物连接

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Replacing expensive silver with inexpensive copper for the metallization of silicon wafer solar cells can lead to substantial reductions in material costs associated with cell production. A promising approach is the use of multi-wire design. This technology uses many wires in the place of busbars, and the copper wires are "soldered" during the lowtemperature lamination process to the fingers (printed or plated) or to the transparent conductive oxide (TCO) layer, e.g. in the case of the a-Si/c-Si heterojunction cells. Here we describe a solar cell design in which wires are attached to TCO layers using transparent conductive polymer (TCP) films. To this end, we have synthesized a number of thermoplastics, poly(arylene ether ketone) copolymers (co-PAEKs), containing phthalide in their main chain. The fraction of phthalide-containing units in the copolymers was p= 3, 5, 15, and 50 mol %. With increasing p, the peak strain temperature of the co-PAEKs rises from 205 to 290 °C and their optical band gap and refractive index increase from 3.12 to 3.15 eV and from 1.6 to 1.614, respectively. The copolymers have a negligible absorption coefficient in the wavelength range 400-1100 nm. When exposed to an excess pressure of 1 atm or above, co-PAEK films less than 30 μm in thickness undergo a transition from a dielectric to a conductive state. The resistivity (p_c) of wire/TCP/TCO (ITO= In_2O_3:Sn and IFO= In_2O_3:F) contacts ranges from 0.37 to 1.43 mQ cm~2. The polymer with the highest phthalide content (p= 50 mol %) has the lowest p_c. The average work of adhesion per unit area determined by pulling off the wires from the polymer surface depends on both the phthalide content of the co-PAEKs and their reduced viscosity, ranging from 14.3 to 43.5 N/cm. The highest value was obtained for the co-PAEK with p= 50 mol %. We have fabricated low-concentration bifacial IFO/(n~+pp~+)Cz-Si/ITO solar cells with a wire contact grid attached to IFO and ITO using a co-PAEK film. The efficien
机译:用廉价的铜代替硅晶片太阳能电池的金属化的昂贵的银可以导致与细胞产生相关的材料成本的实质性降低。有希望的方法是使用多线设计。该技术在汇流条的地方使用许多导线,并且在低温层压过程中,铜线是“焊接”的指向手指(印刷或电镀)或透明导电氧化物(TCO)层。在A-Si / C-Si异质结细胞的情况下。在这里,我们描述了一种太阳能电池设计,其中导线使用透明导电聚合物(TCP)膜附着到TCO层。为此,我们已经合成了许多热塑性塑料,聚(亚芳基醚酮)共聚物(共致Paeks),含有邻苯二甲酸的主链。共聚物中含邻苯二甲酸盐的单元的分数是P = 3,5,15和50mol%。随着P的增加,共拓的峰应变温度从205到290℃上升,它们的光带间隙和折射率分别从3.12增加到3.15eV和1.6到1.614。共聚物在波长范围内具有可忽略的吸收系数400-1100nm。当暴露于1atm或更高的过压时,厚度小于30μm的共PAEK膜经历从电介质到导电状态的过渡。电线/ TCP / TCO的电阻率(P_C)(ITO = IN_2O_3:SN和IFO = IN_2O_3:F)触点从0.37到1.43 mq cm〜2。具有最高的邻苯二甲酸含量(P = 50mol%)的聚合物具有最低P_C。通过从聚合物表面脱离线确定的每单位面积确定的粘合性的平均工作取决于邻苯二甲酸的邻苯二甲酸含量及其降低的粘度,范围为14.3至43.5 n / cm。对于具有P = 50mol%的共磷酸获得最高值。我们使用CO-PAEK薄膜使用连接到IFO和ITO的电线触点栅格制造了低浓度的双因子IFO /(N〜+ PP〜+)CZ-SI / ITO太阳能电池。效率

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