GaAs/AlGaAs waveguiding wavelength conversion devices

机译：GaAs / Algaas波长波长转换装置

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Wavelength conversion via quadratic optical nonlinearity in AlGaAs waveguiding devices will be presented. Devices reported in this article include periodically inverted quasi-phase matching (QPM) devices and thin-rectangular high-index-contrast birefringence phase matching devices. Special emphasis will be placed on GaAs/AlGaAs QPM waveguides fabricated based on epitaxial growth technique (sublattice reversal epitaxy) we have developed for growing spatially inverted semiconductors. We have succeeded in demonstrating QPM second-harmonic generation and difference-frequency generation with reasonably high efficiencies.

机译：将呈现通过AlGaAs波导装置中的二次光学非线性的波长转换。本文中报告的设备包括定期反相的准相位匹配（QPM）器件和薄矩形的高折射率对比双折射相位匹配装置。特别强调基于外延生长技术（Sublattice Reversal Envizaxy）制造的GaAs / Algaas QPM波导，我们开发用于在空间倒置半导体上发展。我们成功地证明了QPM二次谐波产生和差异频率的产生，具有相当高的效率。

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《Conference on Quantum Sensing and Nano Electronics and Photonics XIV》|2017年|v. p.|共6页
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Takashi Kondo;
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中图分类 TP212;
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quadratic nonlinear optics; phase matching; compound semiconductors; molecular beam epitaxy;

机译：二次非线性光学;相位匹配;复合半导体;分子束外延;

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专利

1. Polarization-Insensitive Wavelength Conversion by FWM of 100-GHz-Spaced DWDM 4$,times,$10 Gb/s RZ-BPSK Signals in a Birefringent Nonlinear AlGaAs Waveguide [J] . Mahmood T., Astar W., Cannon B.M., IEEE Journal of Quantum Electronics . 2014,第2期

机译：在双折射非线性AlGaAs波导中通过FWM进行100 GHz间隔DWDM的偏振不敏感波长转换4 $，$ 10 Gb / s RZ-BPSK信号
2. Asymmetric cladding InGaAs-GaAs-AlGaAs ridge waveguide distributed Bragg reflector lasers with operating wavelengths of 915-935 nm [J] . Roh S.D., Hughes J.S. IEEE Photonics Technology Letters . 1997,第3期

机译：工作波长为915-935 nm的非对称包层InGaAs-GaAs-AlGaAs脊形波导分布式布拉格反射器激光器
3. Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene [J] . Knop M, Richter M, Massmann R, Semiconductor science and technology . 2005,第8期

机译：使用负型抗蚀剂杯芳烃在GaAs / AlGaAs上制备电子波导器件
4. GaAs/AlGaAs waveguiding wavelength conversion devices [C] . Takashi Kondo Quantum Sensing and Nano Electronics and Photonics XIV . 2017

机译：GaAs / AlGaAs波导波长转换装置
5. Vertical Integration of Optical Waveguides in the AlGaAs/GaAs Semiconductors [D] . Liao, Zhongfa. 2018

机译：AlGaAs / GaAs半导体中光波导的垂直集成
6. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection [O] . Zhenwu Shi, Lu Wang, Honglou Zhen, 2013

机译：峰值波长控制的InGaAs / AlGaAs量子阱的分子束外延生长用于4.3μm中波长红外检测
7. Design and characterization of a 67 GHz 0.3 um AlGaAs/GaAs/AlGaAs HEMT monolithic amplifier in coplanar waveguide technology [O] . Bessemoulin A., Algani C., Alquié G., 1998

机译：共面波导技术中的67 GHz 0.3 um AlGaAs / GaAs / AlGaAs HEMT单片放大器的设计和表征

GaAs/AlGaAs waveguiding wavelength conversion devices

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