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Wettability Behavior of Si/C and Si-Sn Alloy/C System

机译:Si/C和Si-Sn合金/C体系的润湿行为

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During the Si growth process in the zone melting directional solidification experiment, the wettability behavior of Si source/solvent metal and solvent metal/seed substrate is an important issue for Si purification and growth. In this work, the wettability behavior of Si/C and Si-90 wt% Sn alloy/C system was studied by using the sessile drop method. The results show that Si and Si-Sn alloy wet C substrate, and the wettability gradually improves with the holding time due to the generation of a SiC layer in the metal/C interface and the infiltration Si or Si-Sn alloy into C substrate. Moreover, the addition of Sn into Si melt is beneficial for Si to wet C substrate, because Sn hinders the generation of SiC and Si promotes Sn wetting C substrate.
机译:在区域熔化定向凝固实验中硅的生长过程中,硅源/溶剂金属和溶剂金属/籽晶衬底的润湿性行为是硅提纯和生长的一个重要问题。本文采用静滴法研究了Si/C和Si-90wt%Sn合金/C体系的润湿行为。结果表明,Si和Si-Sn合金对C基片有润湿性,随着保温时间的延长,润湿性逐渐提高,这是由于Si或Si-Sn合金在金属/C界面上生成SiC层,并渗入C基片。此外,在Si熔体中添加Sn有利于Si润湿C衬底,因为Sn阻碍了SiC的生成,而Si促进了Sn润湿C衬底。

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