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Development of a Combined Diamond Impregnated Lapping Plate

机译：组合金刚石浸渍研磨板的开发

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Silicon carbide is very resistant to abrasive action and lapping takes a long time. This paper presents a combined diamond-impregnated lapping plate for single crystal silicon carbide (SiC) to improve the material removal rate. Diamond grit with particles of three different shapes were prepared: (1) "sharp," a sharp-edged diamond; (2) "blocky," high quality crystalline diamond; (3) "oxidized diamond". The diamond grit was prepared using a high temperature furnace to induce diamond oxidation and improve the Ra and sharpness of the diamond particles. Three combined diamond-impregnated lapping plates were Experimental results showed using 6μm diamond grit of the three different shapes. The surface roughness of the lapped SiC wafers was investigated as well as the removal rate using each of the lapping plates. The experimental results showed that the average material removal rate (MRR) using the plate with the oxidized diamond grit was higher than that of the others. The MRR of oxidized diamond for C-face and Si-face of the SiC was 4.72μm/hr and 6.26um/hr and the surface roughness (Ra) for the C-face and Si-face was 7.547nm and 8.06nm. This was a clear indication that the combined diamond-impregnated lapping plate was effective and could be used for SiC machining.
机译：碳化硅对磨蚀作用非常耐磨损，研磨需要很长时间。本文介绍了用于单晶碳化硅（SiC）的组合金刚石浸渍研磨板，以提高材料去除率。制备颗粒颗粒颗粒，三种不同形状的颗粒：（1）“尖锐”，锋利的金刚石; （2）“块状”，高质量的结晶金刚石; （3）“氧化钻石”。使用高温炉制备金刚石砂砾，以诱导金刚石氧化并改善金刚石颗粒的RA和锐度。三个合并的金刚石浸渍研磨板是使用三种不同形状的6μm金刚石砂砾显示的实验结果。研究了覆盖的SiC晶片的表面粗糙度以及使用每个研磨板的去除速率。实验结果表明，使用具有氧化金刚石砂岩的平均材料去除率（MRR）高于其他材料去除率（MRR）高于其他材料。对于SiC的C头部和Si面的氧化金刚石的MRR为4.72μm/ hr和6.26um / hr，C头部的表面粗糙度（Ra）和Si-face为7.547nm和8.06nm。这是一个明确的指示，组合的金刚石浸渍研磨板是有效的，可用于SiC加工。

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