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首页> 外文会议>IEEE World Conference on Photovoltaic Energy Conversion >Graded Superlattice and Resonantly Coupled Quantum Wells for Dilute Nitride Solar Cells with Open Circuit Voltages that Exceed that of the Absorber’s Radiative Limit
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Graded Superlattice and Resonantly Coupled Quantum Wells for Dilute Nitride Solar Cells with Open Circuit Voltages that Exceed that of the Absorber’s Radiative Limit

机译：用于稀释氮化物太阳能电池的分级超晶格和共振耦合量子孔，其具有超过吸收器辐射极限的开路电压

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The presentation focuses on the use of quantum engineered dilute nitride solar cells to alleviate minority carrier lifetime/ poor carrier collection issues encountered in these devices and aims at identifying novel pathways toward the development of high efficiency tandems. First and within the frame work of 1 to 1.2 eV III-V dilute nitride solar cells we will stress the strength of the carefully designed quantum engineered dilute nitride absorbers for achieving near unity photo-generated carrier collection. We will then show experimentally the possibility of realizing devices with open circuit voltages that approach or surpass the radiative limit (Woc= Eg-Voc~0.4 eV), The latest is achieved by developing thin barrier GaAsN/GaAs super-lattices in the intrinsic region and here we demonstrate a record open circuit voltage having Woc=Eg/q-Voc~0.24, that exceed the perceived radiative limit thus set the highest value reported in the literature for dilute nitride solar cells and set a pathway for extending the multijunction solar cell efficiencies to beyond 50%.
机译：介绍侧重于使用量子工程化稀氮化物太阳能电池来缓解这些装置中遇到的少数载体寿命/较差的载体收集问题，并旨在识别新的途径，以达到高效串联的发展。第一和在1至1.2 eV III-V稀氮化物太阳能电池的框架工作中，我们将强调精心设计的量子工程化稀释氮化物吸收器，以实现靠近Unity照片的载体收集。然后，我们将通过实验显示实现具有开放电路电压的设备的可能性，该电路电压接近或超越辐射极限（WOC = EG-VOC〜0.4eV），通过在内在区域中开发薄壁屏障GAASN / GAAS超格子来实现的最新在这里，我们展示了具有WOC = EG / Q-VOC〜0.24的记录开路电压，其超过感知的辐射极限，从而设定了稀氮化物太阳能电池的文献中报告的最高值，并设定了用于延长多结太阳能电池的途径效率超过50％。

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