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Root cause investigation of back-irradiance-induced failure of high power diode lasers

机译:高功率二极管激光器背辐射诱导失效的根本原因

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Back-irradiance testing of high power diode lasers with absorbing substrates reveals catastrophic failure occurs when the return spot is shifted slightly with respect to the quantum well (into the substrate). Thermoreflectance temperature mapping shows this position to be the point of maximum facet temperature rise at the active region. Finite element thermal modelling, which is in close agreement with thermoreflectance results, indicates a root cause of thermal cross-heating between the absorbed back-irradiance light in the substrate and heating in the active region.
机译:当返回点相对于量子阱(进入基板)时,当返回点略微移动时,发生高功率二极管激光器的背部辐照度测试揭示了灾难性的故障。热度反应温度映射显示该位置是在有源区的最大面温度上升的点。有限元热建模与热反射结果密切一致,表明基板中吸收的背辐射光和在有源区中加热之间的热交叉加热的根本原因。

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