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Analytical Study of BTE Based Multilayer GFET Model

机译：基于BTE的多层GFET模型的分析研究

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In this paper we have studied a analytical double gate graphene field effect transistor. The developed GFET model is a quasi analytical approach based on Boltzmann transport equation and the explicit expression of drain to source current has been derived. The model has been applied for monolayer to multilayer with single gate or dual gate configuration. The quantum capacitance effect for every layer and the interlayer capacitance have been included to determine the accurate effective top and back gate capacitance. The modeled channel resistance, output and transfer characteristics show good agreement with experimental data for different layers configuration.
机译：本文研究了分析双栅极石墨烯场效应晶体管。开发的GFET模型是基于Boltzmann传输方程的准分析方法，并推导出漏极电流的显式表达。该模型已应用于具有单个栅极或双栅极配置的Monolayer到多层。已经包括每个层和中间层电容的量子电容效应以确定精确的有效顶部和后栅电容。模型通道电阻，输出和传输特性与不同层配置的实验数据显示出良好的一致性。

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