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Investigation of Threshold Switch OFF -State Resistance on Performance Enhancement in 2D Mos2 Phase-FETs

机译：阈值开关关态电阻对2D Mos2相FET性能增强的研究

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Volatile threshold switch (TS) devices, which display abrupt changes in conductivity in response to external stimuli such as temperature or electric field, are currently being explored for uses in novel electronic devices [1]–[3]. One such device, Phase-FET, integrates a TS with the source ofa conventional MOSFET such that the abrupt threshold switching phenomena and variable resistance states can be harnessed to produce steep sub-kT/q <60 mV/dec) switching, enabling enhanced InONnat reduced supply voltage for a given InOFFn[4], [5]. Achieving these characteristics, however, requires careful design of the TS OFF -state resistance with respect to the MOSFET channel resistance. In this work, we experimentally demonstrate the importance of TS OFF-state resistance on Mo'Sj-bascd Phase-FET performance using VOn2nand Ag/Hf0n2n/Pt TS devices to show 30x enhanced InONn(at matchedn$mathrm{I}_{mathrm{OFF}}$n) over baseline MOSFET when TS and MOSFET OFF-state resistance are matched.
机译：挥发性阈值开关（TS）器件可响应外部刺激（例如温度或电场）而显示出电导率的突然变化，目前正在开发用于新型电子设备[1] – [3]。一种这样的器件，即Phase-FET，将TS与常规MOSFET的源极集成在一起，从而可以利用突变的阈值开关现象和可变电阻状态来产生陡峭的亚kT / q（<60 mV / dec）开关，从而实现增强的In 打开减少了给定In OFF的电源电压 n [4]，[5]。但是，要实现这些特性，需要仔细设计相对于MOSFET沟道电阻的TS OFF状态电阻。在这项工作中，我们使用VOn 2 nand Ag / Hf0n 2 n / Pt TS设备显示30倍增强的In 打开 n（匹配n $ mathrm {I} _ {mathrm {OFF}} $ n当TS和MOSFET关断状态电阻匹配时，在基准MOSFET上）。

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