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首页> 外文会议>SPIE Defense + Security Conference >Influence of radiative recombination on performance of p-i-n HOT long wavelength infrared HgCdTe photodiodes
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Influence of radiative recombination on performance of p-i-n HOT long wavelength infrared HgCdTe photodiodes

机译：辐射重组对P-IN热长波长红外HGCDTE光电二极管性能的影响

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An enhanced computer program has been applied to explain in detail the influence of different recombination mechanisms (Auger, radiative and Shockley-Read-Hall) on the performance of high operation temperature long wavelength infrared p-i-n HgCdTe heterojunction photodiodes. The computer program is based on a solution of the carrier transport equations, as well as the photon transport equations for semiconductor heterostructures. We distinguish photons in different energy ranges with unequal band gaps. As a result, both the distribution of thermal carrier generation and recombination rates and spatial photon density distribution in photodiode structures have been obtained. It is shown that photon recycling effect limits the influence of radiative recombination on the performance of small pixel HgCdTe photodiodes. In comparison with two previously published papers in Journal of Electronics Materials (Lee et al., 10.1007/s 11664-016-4566-6 and Schuster et al., 10.1007/s11664-017-5736-x) our paper indicates an additional insight on ultimate performance of LWIR HOT HgCdTe arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to system optics.
机译：已经应用增强的计算机程序，详细阐述了不同重组机构（螺旋钻，辐射和震动厅）对高操作温度长波长红外P-I-N HGCDTE异质结光电二极管的影响。计算机程序基于载波传输方程的解决方案，以及用于半导体异质结构的光子传输方程。我们将不同能量范围的光子区分开了不等的带空隙。结果，已经获得了光电二极管结构中的热载流子产生和复合速率的分布和空间光子密度分布。结果表明，光子回收效果限制了辐射重组对小像素HGCDTE光电二极管性能的影响。与两个先前发布的电子材料杂志相比（Lee等，10.1007 / s 11664-016-4566-6和Schuster等，10.1007 / s11664-017-5736-x）我们的论文表明了额外的见解LWIR热HGCDTE阵列具有像素密度的极限性能，这些像素密度完全一致，由系统光学引起的背景和衍射限制性性能。

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