首页> 外文会议>Conference on infrared technology and applications >Reduction of dark current density by five orders at high bias and enhanced multicolour photo response at low bias for quaternary alloy capped InGaAs/ GaAs QDIPs, when implanted with low-energy light (H-) ions

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Reduction of dark current density by five orders at high bias and enhanced multicolour photo response at low bias for quaternary alloy capped InGaAs/ GaAs QDIPs, when implanted with low-energy light (H-) ions

机译：当植入低能量光（H-）离子时，在低偏置下的高偏置和增强的多色照片响应下减少暗电流密度的五个订单和增强的多色照片响应。

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Considering the importance of In(Ga)As/GaAs QDIPs, a post-growth method had been developed for enhancing QDIP characteristics using low energy light ion (H) implantation. Dark current density was reduced by about five orders for the implanted devices due to the reduction in field assisted tunneling process for dark current generation, even at a very high bias of operation. Stronger multicolor mid wavelength photo response (～5.6 μm) was achieved at a very low bias of operation for the implanted device.

机译：考虑到（GA）AS / GaAs Qdips的重要性，已经开发了使用低能量光离子（H）植入来提高QDIP特性的生长后的方法。由于暗电流发电的现场辅助隧道工艺的减少，植入装置的暗电流密度减小了约五个订单，即使在暗电流发电的情况下，即使在非常高的操作偏差上也是如此。在植入装置的操作非常低的操作中，实现了更强的多色中波长照片响应（〜5.6μm）。

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《Conference on infrared technology and applications》|2013年||共8页
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A. Mandal; H. Ghadi; Goma Kumari K.C.; A. Basu; N. B. V. Subrahmanyam; P. Singh; S.Chakrabarti;
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正文语种
中图分类红外技术及仪器;
关键词
QDIP; quaternary capping; InGaAs/ GaAs QD; dark current; photo response; multicolour imaging; detectivity; responsivity;

机译：Qdip;四元封帽;indaas / gaas qd;暗电流;照片响应;多色成像;探测;响应;响应;

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专利

1. Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H~-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors [J] . A. Mandal, H. Ghadi, K.L. Mathur, Materials Research Bulletin . 2013,第8期

机译：拟议的机制来代表四级合金封顶的InAs / GaAs量子点红外光电探测器中低能光离子（H〜-）注入通过四阶抑制暗电流密度
2. Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers [J] . Ralston J.D., Weisser S. IEEE Photonics Technology Letters . 1994,第9期

机译：InGaAs / GaAs / AlGaAs伪形MQW脊形波导激光器中的高达33 GHz的低偏置电流直接调制
3. Improvement of Dark Current Using InP/InGaAsP Transition Layer in Large-Area InGaAs MSM Photodetectors [J] . Junghwan Kim, William B. Johnson, S. Kanakaraju, IEEE Transactions on Electron Devices . 2004,第3期

机译：在大面积InGaAs MSM光电探测器中使用InP / InGaAsP过渡层改善暗电流
4. Reduction of dark current density by five orders at high bias and enhanced multicolour photo response at low bias for quaternary alloy capped InGaAs/ GaAs QDIPs, when implanted with low-energy light (H-) ions [C] . A. Mandal, H. Ghadi, Goma Kumari K.C., Conference on infrared technology and applications . 2013

机译：当四元合金封盖的InGaAs / GaAs QDIPs注入低能光（H-）离子时，在高偏压下将暗电流密度降低五倍，在低偏压下增强多色光响应
5. Expression of Different Types of Inward Rectifier Currents Confers Specificity of Light and Dark Responses in Type A and B Photoreceptors of Hermissenda [O] . Ebenezer N. Yamoah, Louis Matzel, Terry Crow 1998

机译：内向整流器电流的不同类型的表达赋予Hermissenda A型和B型感光器明和暗响应的特异性
6. Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing [O] . Tan, SL, Tan, LJJ, Goh, YL, 2010

机译：通过异位退火减少InGaAsN光电探测器中的暗电流和意外的背景掺杂
7. Zero-Bias Offsets in the Low-Temperature Dark Current of Quantum-Well Infrared Photodetectors [R] . Singh, A. , Cardimona, D. A. 1999

机译：量子阱红外光电探测器低温暗电流中的零偏置偏移

Reduction of dark current density by five orders at high bias and enhanced multicolour photo response at low bias for quaternary alloy capped InGaAs/ GaAs QDIPs, when implanted with low-energy light (H-) ions

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