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Implants of ClusterBoron庐 and ClusterCarbon驴 materials for USJ applications - a study with various anneal techniques

机译：用于USJ应用的ClusterBoron®和ClusterCarbon驴材料的植入物-各种退火技术的研究

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implants using ClusterBoronreg material for PMOS ultra-shallow junction (USJ) applications using solid phase epitaxial regrowth (SPER), high temperature spike anneal, impulse RTP (fRTPtrade) and Flash As

机译：采用ClusterBoronreg材料的PMOS超浅结（USJ）应用的固相外延再生（SPER），高温尖峰退火，脉冲RTP（fRTPtrade）和Flash As

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《》|2007年|P.75-80|共6页
会议地点 Cannizzaro CataniaItaly
作者
Sekar; K.; Krull; W.; Horsky; T.; Chan; J.; McCoy; S.; Gelpey; J.;
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MOS integrated circuits; annealing; ion implantation; solid phase epitaxial growth; transmission electron microscopy; ClusterBoron; ClusterCarbon; PMOS ultrashallow junction; TEM; diffusion-less anneals; flash-assisted anneals; high temperature spike anneal; ion imp;

机译：MOS集成电路；退火;离子注入固相外延生长；透射电子显微镜ClusterBoron;集群碳; PMOS超浅结； TEM;无扩散退火；闪光辅助退火；高温尖峰退火；离子冲击;

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专利

1. Annealing techniques for optimizing 45nm-node USJs [J] . John Borland, Akira Mineji, Wade Krull, Solid state technology . 2006,第5期

机译：优化45nm节点USJ的退火技术
2. Millisecond flash annealing: Applications for USJ formation and optimization of device electrical characteristics [J] . John Foggiato, Woo Sik Yoo Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2005,第Dec期

机译：毫秒级快速退火：USJ形成和器件电特性优化的应用
3. Evaluation of accuracy of casts of multiple internal connection implant prosthesis obtained from different impression materials and techniques: an in vitro study. [J] . PujariM., GargP., PrithvirajD.R. The Journal of oral implantology . 2014,第2期

机译：从不同压印材料和技术获得的多个内部连接植入物假体的铸模准确性评估：一项体外研究。
4. Implants of ClusterBoron庐 and ClusterCarbon驴 materials for USJ applications - a study with various anneal techniques [C] . Sekar Karuppanan, Krull Wade, Horsky Tom, International Conference on Advanced Thermal Processing of Semiconductors . 2007

机译：USJ应用的ClasterBoron庐和ClusterCarbon驴材料的植入物 - 各种退火技术的研究
5. Study of millisecond laser annealing on ion implanted soi and application to scaled finfet technology. [D] . Michalak, Tyler J. 2015

机译：离子注入半导体上毫秒激光退火的研究及其在规模化finfet技术中的应用。
6. Comparison of implant cast accuracy of multiple implant impression technique with different splinting materials: An in vitro study [O] . Sunantha Selvaraj, Jayachandran Dorairaj, Jayashree Mohan, 2016

机译：不同夹板材料的多种种植体压印技术的种植体铸造精度比较：一项体外研究
7. Comparison of implant cast accuracy of multiple implant impression technique with different splinting materials: An in vitro study [O] . Sunantha Selvaraj, Jayachandran Dorairaj, Jayashree Mohan, 2016

机译：多种种植体印模技术与不同夹板材料的种植体铸造精度比较：体外研究
8. Investigation on Ion Implantation as a Technique Suitable to Fabricate High Efficiency Silicon Solar Cells Ion Implanted, Electron Beam Annealed Cells: Final Report [R] . Galloni, R. , Merli, P. G. 1985

机译：离子注入技术适用于制造高效硅太阳能电池离子注入电子束退火电池的研究：最终报告

Implants of ClusterBoron庐 and ClusterCarbon驴 materials for USJ applications - a study with various anneal techniques

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