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首页> 外文会议>Latin America Electron Devices Conference >Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications
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Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications

机译：多功能BICMOS技术平台，用于多功能应用的低成本集成

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摘要

Integration of Horizontal Current Bipolar Transistor (HCBT) with CMOS requires fewer additional fabrication steps as compared to vertical-current bipolar devices having state-of-the-art electrical characteristics both in demonstrated implanted-base technology and in simulated SiGe-base technology. HCBT’s noise characteristics and large-signal performance for RF applications is tuned by the collector region design and the optimum device for each application is identified and characterized. High-voltage transistors are demonstrated in HCBT technology with BVCEO from 2.8 V to above 70 V enabling the integration RF and power management and other high-voltage circuits. The HCBT with SiGe base exhibits a potential of further improving the highest-performance vertical-current SiGe HBTs and overcoming their integration limitations with CMOS due to geometrical and material incompatibility.
机译：与CMOS的水平电流双极晶体管（HCBT）的整合需要较少的额外制造步骤，与具有所示植入基础技术和模拟SiGe基础技术的最先进的电气特性的垂直电流双极器件相比。 HCBT的噪声特性和RF应用的大信号性能由收集器区域设计调整，并且每个应用程序的最佳设备被识别和表征。 高压晶体管用BV的HCBT技术证明 CEO 从2.8 V至70 V，实现集成RF和电源管理等高压电路。 具有SiGe基座的HCBT表现出进一步改善最高性能垂直电流SiGE HBT的潜力，并且由于几何和材料不相容而克服了与CMOS的集成限制。

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