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首页> 外文会议>Metamaterials: Fundamentals and applications IV >A simple theoretical analysis of the Einstein relation for the DMR (diffusivity-mobility ratio) in Nono compounds on the basis of k.p formalism
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A simple theoretical analysis of the Einstein relation for the DMR (diffusivity-mobility ratio) in Nono compounds on the basis of k.p formalism

机译：基于k.p形式主义的Nono化合物DMR（扩散-迁移率）的爱因斯坦关系的简单理论分析

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摘要

An attempt is made to study the Einstein relation for the diffusivity-mobility ratio (DMR) in nonlinear optical and Optoelectronic compounds on the basis of a newly formulated electron energy spectrum. The results for ternary, Ⅲ-Ⅴ and quaternary types of optoelectronic materials form a special case of our generalized investigation. 1 have also studied the DMR in Ⅱ-Ⅵ, Bi, Ⅳ-Ⅵ and stressed materials on the basis of various band models as applicable for such focused materials, It has been found taking n-Cd_3As_2, n-CdGeAs_2, n-InAs, n-InSb, n-Hg_(1-x)Cd_xTe, n-In_(1-x)Ga_xAs_yP_(1-y)lattice matched to InP, CdS, Bi, PbS, PbTe, PbSe and stressed InSb as examples of the aforementioned compounds that the DMR increases with increasing electron concentration in various manners for different band constants of the said materials and the rates of variation are totally band structure dependent. Now the well-known results for non-degenerate wide gap optical and Optoelectronic materials have been obtained as special cases of our generalized theory under definite limiting background.
机译：尝试根据新制定的电子能谱研究非线性光学和光电化合物中扩散率-迁移率（DMR）的爱因斯坦关系。三元，Ⅲ-Ⅴ和四元类型的光电材料的结果构成了我们广义研究的一个特例。 1还根据适用于此类聚焦材料的各种能带模型研究了Ⅱ-Ⅵ，Bi，Ⅳ-Ⅵ和受压材料中的DMR，发现采用n-Cd_3As_2，n-CdGeAs_2，n-InAs， n-InSb，n-Hg_（1-x）Cd_xTe，n-In_（1-x）Ga_xAs_yP_（1-y）晶格与InP，CdS，Bi，PbS，PbTe，PbSe和应力InSb匹配，作为上述示例对于所述材料的不同能带常数，DMR随着电子浓度的增加而以各种方式增加的化合物，并且变化率完全取决于能带结构。现在，作为有限条件下我们广义理论的特例，已经获得了非简并宽间隙光学和光电材料的众所周知的结果。

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