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首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >Bird's Beak and Thermally Induced Stress Defects Evaluations of LOCOS Structures Fabricated Using ECR-CVD SiN_x Without Pad Oxide
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Bird's Beak and Thermally Induced Stress Defects Evaluations of LOCOS Structures Fabricated Using ECR-CVD SiN_x Without Pad Oxide

机译：使用无垫氧化物的ECR-CVD SiN_x制成的LOCOS结构的鸟嘴和热诱导应力缺陷评估

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摘要

Silicon Nitrides were deposited on the silicon substrates by ECR-CVD (electron cyclotron resonance chemical vapor deposition), without using the pad oxide in LOCOS (LOCal Oxidation of Silicon) isolation technology. The SiN_x/Si structure was used to substitute the SiN_x/SiO_2/Si. The study of this type of the structure was motivated by the possibility to reduce the length of the bird's beak. Defects were created on silicon because the high temperature (1000℃) applied on SiN_x/Si. The Dash wet chemical etch was used to etch the defect on silicon. Optical and SEM microscopy analysis were used to investigate the bird's beak in the obtained LOCOS structures and the defects (dislocations) on silicon performed after high temperature process.
机译：氮化硅通过ECR-CVD（电子回旋共振化学气相沉积）沉积在硅基板上，而无需在LOCOS（硅的LOCal氧化）隔离技术中使用垫层氧化物。用SiN_x / Si结构代替SiN_x / SiO_2 / Si。减少鸟喙长度的可能性推动了这种结构的研究。由于在SiN_x / Si上施加了高温（1000℃），因此在硅上产生了缺陷。 Dash湿法化学蚀刻用于蚀刻硅上的缺陷。使用光学和SEM显微镜分析来研究获得的LOCOS结构中的鸟嘴以及高温处理后在硅上进行的缺陷（位错）。

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  • 来源
  • 会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
  • 作者

    H. M. Scalise; I. Doi; J. A. Diniz;

  • 作者单位

    School of Electrical and Computer Engineering, State University of Campinas P. Box 6101, 13083-970 Campinas-SP, Brazil Center for Semiconductor Components, State University of Campinas P. Box 6061, 13083-870 Campinas-SP, Brazil;

    School of Electrical and Computer Engineering, State University of Campinas P. Box 6101, 13083-970 Campinas-SP, Brazil Center for Semiconductor Components, State University of Campinas P. Box 6061, 13083-870 Campinas-SP, Brazil;

    School of Electrical and Computer Engineering, State University of Campinas P. Box 6101, 13083-970 Campinas-SP, Brazil Center for Semiconductor Components, State University of Campinas P. Box 6061, 13083-870 Campinas-SP, Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路（IC）;
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