Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs

机译：鳍宽度对标准和应变三栅极nFinFET的固有电压增益的影响

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This work studies the influence of the fin width on the intrinsic voltage gain of standard and strained Si (sSOI) n-type triple-gate FinFETs with high-k dielectrics and metal gate. It is demonstrated that independent of the fin width the application of strain improves the device transconductance. On the other hand, the device output conductance shows a high dependence on the fin width in strained FinFETs with respect to standard ones. The output conductance degrades if narrow fins are used and improves for wide fins. Narrow strained FinFETs show a degradation of the Early voltage compared to standard ones suggesting that strained devices are more subjected to the channel length modulation effect.

机译：这项工作研究了鳍宽度对具有高k电介质和金属栅的标准和应变Si（sSOI）n型三栅FinFET的固有电压增益的影响。结果表明，与鳍片宽度无关，应变的施加改善了器件的跨导。另一方面，相对于标准FinFET，器件输出电导对应变FinFET中的鳍宽度高度依赖。如果使用窄鳍，输出电导会降低，而对于宽鳍，输出电导会提高。与标准的相比，窄应变的FinFET显示出早期电压的下降，这表明应变器件更容易受到沟道长度调制的影响。

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《Microelectronics Technology and Devices-SBMicro 2008》|2008年|253-261|共9页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
M. A. Pavanello; J. A. Martino; E. Simoen; R. Rooyackers; N. Collaert; C. Claeys;
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Department of Electrical Engineering, Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, 09850-901, Sao Bernardo do Campo, Brazil LSI/PSI/USP, University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3 n. 158, 05508-900, Sao Paulo, Brazil;

LSI/PSI/USP, University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3 n. 158, 05508-900, Sao Paulo, Brazil;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

E.E. Dept., KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium IMEC, Kapeldreef 75, B-3001 Leuven, Belgium E.E. Dept., KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

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正文语种 eng
中图分类微电子学、集成电路（IC）;
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2. Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation [J] . Song J.-J., Choi B. K., Zhang E. X., Nuclear Science, IEEE Transactions on . 2011,第6期

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3. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation [J] . C C M Bordallo, F F Teixeira, M A G Silveira, Semiconductor science and technology . 2014,第12期

机译：标准和单轴应变三栅极SOI FinFET在X射线辐射下的模拟性能
4. Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs [C] . M. A. Pavanello, J. A. Martino, E. Simoen, Symposium on Microelectronics Technology and Devices . 2008

机译：翅片宽度对标准和应变三栅极NfinFET的内在电压增益的影响
5. Mechanisms of Gain Control by Voltage-Gated Channels in Intrinsically-Firing Neurons [O] . Ameera X. Patel, Denis Burdakov -1

机译：本征神经元中电压门控通道的增益控制机制
6. Performance of Source Follower Buffers Implemented with Standard and Strained Triple-Gate nFinFETs [O] . Marcelo Antonio Pavanello, João Antonio Martino, Eddy Simoen, 2010

机译：用标准和紧张三栅极NFInfet实现的源跟随缓冲区的性能

Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs

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