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首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >Electrical Characterization of Multi-Walled Carbon Nanotubes in 2 and 4 Terminals Configurations
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Electrical Characterization of Multi-Walled Carbon Nanotubes in 2 and 4 Terminals Configurations

机译：2和4端子配置的多壁碳纳米管的电学表征

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摘要

In summary, the electrical transport properties in MWNT have been investigated. For improvement of nanotube contacts with electrodes, deposition of Ni and Pd films by the electroless technique was employed, to make all around contacts. The differential conductance was found to increase with bias varying in the range 0-3V, and the effect of bais was more pronounced for Ni contacts.rnA resistive transmission line model was applied to analyse the results obtained using 2 and 4 terminals techniques. In the model, it is assumed that the current flows mainly through the two outermost shells, and electron transport between the shells (with 0.34 nm separation) is possible due to a finite intershell conductance. Further, local 4 terminal resistance measurements at low bias varying the distance of current biased electrodes are found to be consistent with the model. A fitting procedure was employed to estimate resistivities of the first and the second shells and the intershell conductance per length. However, further studies are needed for better understanding of transport properties and the differences exsiting between the low and high-bias regimes.
机译：总之，已经研究了MWNT中的电传输性质。为了改善纳米管与电极的接触，采用了无电技术沉积Ni和Pd膜以形成周围的所有接触。发现在0-3V范围内偏置时电导率随电势的增加而增加，而bais对Ni触点的影响更为明显。采用电阻传输线模型分析了使用2端子和4端子技术获得的结果。在模型中，假设电流主要流过两个最外层外壳，并且由于外壳之间的电导率有限，外壳之间的电子传输（间隔为0.34 nm）是可能的。此外，发现在低偏置下改变电​​流偏置电极距离的局部4端子电阻测量结果与该模型一致。采用拟合程序来估计第一和第二壳的电阻率以及每长度的壳间电导。但是，需要进一步研究以更好地理解传输特性以及低和高偏置机制之间存在的差异。

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  • 来源
  • 会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
  • 作者

    J. Leon; S. A. Moshkalev; A. Flacker; A. R. Vaz; C. Verissimo; M. B. de Moraes;

  • 作者单位

    Center for Semiconductor Components - CCS, UNICAMP, C.P. 6061, CEP 13083-870, Campinas, SP, Brazil;

    Center for Semiconductor Components - CCS, UNICAMP, C.P. 6061, CEP 13083-870, Campinas, SP, Brazil;

    Center for Semiconductor Components - CCS, UNICAMP, C.P. 6061, CEP 13083-870, Campinas, SP, Brazil;

    Center for Semiconductor Components - CCS, UNICAMP, C.P. 6061, CEP 13083-870, Campinas, SP, Brazil;

    Center for Semiconductor Components - CCS, UNICAMP, C.P. 6061, CEP 13083-870, Campinas, SP, Brazil;

    IFGW, UNICAMP, C.P. 6101, CEP 13083-970, Campinas, SP, Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路（IC）;
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