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首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >AN IMPROVED CURRENT MODEL IN SATURATION FOR TRAPEZOIDAL FINFETS
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AN IMPROVED CURRENT MODEL IN SATURATION FOR TRAPEZOIDAL FINFETS

机译：梯形FINFET饱和的改进电流模型。

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摘要

In order to obtain a more accurate equation for the trapezoidal FinFET current model, some new considerations were done to improve an already-published model. The most important is related to the device partition. The original derivation partitioned the device into horizontal slices, each of them considered as a double-gate elementary transistor, in parallel association with the others. The observation of the FinFET electric potential behavior, obtained from three-dimensional numeric simulation, leaded to a more adequate definition of these elementary transistors, mainly at the edges, and consequently to a new saturation current equation. The improved model was compared to the original, through the analysis of the current-voltage equations, for trapezium angles in the 60 to 90 degrees range, and different doping levels. The new model showed to be more accurate than the previous for higher doping levels and more inclined sidewalls, when both were compared to numeric simulation results.
机译：为了获得梯形FinFET电流模型的更精确的方程式，进行了一些新的考虑以改进已经发布的模型。最重要的是与设备分区有关。原始推导将器件划分为水平切片，每个切片被视为双栅极基本晶体管，与其他晶体管并联关联。从三维数值模拟获得的FinFET电位行为的观察结果，可以更充分地定义这些基本晶体管的定义，主要是在边缘，因此得到了一个新的饱和电流方程式。通过分析电流-电压方程，将改进后的模型与原始模型进行比较，以了解60至90度范围内的梯形角以及不同的掺杂水平。当将两者与数值模拟结果进行比较时，对于更高的掺杂水平和更倾斜的侧壁，新模型显示出比以前更准确的模型。

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  • 来源
  • 会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
  • 作者

    Gustavo Martins; Renato Giacomini; Joao Antonio Martino;

  • 作者单位

    Centre Universitario da FEI Av. H. de A. Castelo Branco, 3972. S. B.do Campo - SP. ZIP: 09850-901. Brazil;

    Centre Universitario da FEI Av. H. de A. Castelo Branco, 3972. S. B.do Campo - SP. ZIP: 09850-901. Brazil LSI/PSI/USP, University of Sao Paulo Av. Prof. Luciano Gualberto Trav.3 N.158. Sao Paulo - SP. ZIP: 05508-900. Brazil;

    LSI/PSI/USP, University of Sao Paulo Av. Prof. Luciano Gualberto Trav.3 N.158. Sao Paulo - SP. ZIP: 05508-900. Brazil;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路（IC）;
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