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Equivalent Rectangular Active Region and SPICE Macro Model for Split-Drain MAGFETs

机译:分流MAGFET的等效矩形有源区和SPICE宏模型

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摘要

A MAGnetic MOSFET (MAGFET) is a magnetic sensor compatible with CMOS technology presenting a good linearity with Magnetic Flux Density (MFD). If this MOS structure is split drain, it is called Split-Drain MAGFET (SD-MAGFET) and produces a drain current imbalance when it is immersed in a MFD (1-2). Although several circuits based on SD-MAGFETs have been proposed (1-4), there is neither a general expression to estimate the equivalent rectangular aspect ratio in order to improve the circuit design nor an adequate SPICE model to introduce the most important variations between each side of the channel associated to each drain.
机译:磁性MOSFET(MAGFET)是与CMOS技术兼容的磁传感器,与磁通密度(MFD)表现出良好的线性关系。如果此MOS结构是分流漏极,则称为分流MAGFET(SD-MAGFET),当将其浸入MFD(1-2)时会产生漏电流不平衡。尽管已经提出了几种基于SD-MAGFET的电路(1-4),但既没有通用表达式来估算等效矩形长宽比以改善电路设计,也没有足够的SPICE模型来引入各电路之间最重要的变化与每个漏极相关的通道的侧面。

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  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者单位

    Department of Electronics, National Institute for Astrophysics, Optics and Electronics Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, Puebla, Mexico, C.P. 72840;

    Department of Electronics, National Institute for Astrophysics, Optics and Electronics Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, Puebla, Mexico, C.P. 72840;

    Department of Electronics, National Institute for Astrophysics, Optics and Electronics Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, Puebla, Mexico, C.P. 72840;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

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