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首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Studies about Flow Rate Effect on Atomic Fluorine Generation in Inductively Coupled CF_4 Plasmas: A Global Model Investigation
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Studies about Flow Rate Effect on Atomic Fluorine Generation in Inductively Coupled CF_4 Plasmas: A Global Model Investigation

机译：流量对感应耦合CF_4等离子体中原子氟产生的影响：整体模型研究

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摘要

CF_4 is a common etchant in the microelectronics industry. It is commonly used to etch silicon, silicon dioxide and silicon nitride. The presence of carbon in its molecular structure allows, depending on the process parameters, to obtain highly anisotropic profiles due to polymerization of the walls of etched structures. However, for this gas type, there is an inverse relationship between the anisotropy and the etching rate (ER), which often difficult its application in single step microfabrication processes. In this scope, several efforts have been made to understand the effects of process parameters such as discharge power, gas pressure, flow rate and gas composition on the etching agent concentration (atomic fluorine density, n_F) and ER in CF_4 plasmas. Among these parameters, the effect of the gas flow rate shows different results with respect to n_F and ER depending on how the variation of pressure is made, i.e., under variable or constant gas flow rate (1). It is observed an effect of increase and subsequent decrease in the nF when the gas flow rate (or pressure) is increased; by another hand, for a fixed gas flow rate a minimization of this effect is observed, resulting in high n_F when the pressure is increased by decreasing the pumping speed (1). Si etching experiments realized by Chapman et al for variable flow shows a similar behavior to the ηF (2, 3). At that time, the utilization factor concept was introduced for explaining the flow rate effect on resulting ER (2). This concept seeks to explain the results based on the phenomenology of supply and pumping of etchant gas. However, little is discussed about the chemical kinetics of the neutral and plasma species when this flow effect is taken into account.rnIn this work it was investigated, through the use of a volume-averaged global model for inductively coupled CF_4 plasma, the role of the different processes of production (dissociation, attachment,...) and loss (neutral recombination, surface recombination,...)
机译：CF_4是微电子工业中常用的蚀刻剂。它通常用于蚀刻硅，二氧化硅和氮化硅。根据工艺参数，由于蚀刻结构壁的聚合，碳在其分子结构中的存在允许获得高度各向异性的轮廓。但是，对于这种气体类型，各向异性和蚀刻速率（ER）之间存在反比关系，这通常使其难以在单步微加工过程中应用。在此范围内，已经做出了一些努力来理解诸如放电功率，气压，流速和气体成分等工艺参数对CF_4等离子体中蚀刻剂浓度（原子氟密度，n_F）和ER的影响。在这些参数中，气体流量的影响相对于n_F和ER表现出不同的结果，具体取决于压力变化的方式，即在可变或恒定气体流量下（1）。观察到，当气体流量（或压力）增加时，nF会增加并随后降低。另一方面，对于固定的气体流量，观察到此效应最小，当通过降低抽速（1）来增加压力时，n_F较高。 Chapman等人针对可变流量实现的硅蚀刻实验显示出与ηF（2，3）类似的行为。当时，引入了利用率因子的概念来解释流速对生成的ER的影响（2）。该概念旨在根据蚀刻剂气体的供应和泵送现象来解释结果。但是，当考虑到这种流动效应时，关于中性和等离子体物质的化学动力学的讨论很少。在这项工作中，通过使用体积平均的整体模型对感应耦合CF_4等离子体进行了研究，不同的生产过程（解离，附着等）和损失（中性重组，表面重组等）

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  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    R. S. Pessoa; S. W. C. Parada; M. A. Fraga; M. Roberto; H. S. Maciel; G. Petraconi;

  • 作者单位

    Plasma Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasma Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasma Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasma Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasma Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasma Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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