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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Analytical Model for the Threshold Voltage in Junctionless Nanowire Transistors of Different Geometries
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Analytical Model for the Threshold Voltage in Junctionless Nanowire Transistors of Different Geometries

机译：不同几何形状的无结纳米线晶体管阈值电压的解析模型

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摘要

Junctionless nanowire transistors (JNTs) are considered promising for the sub-20 nm era. As these devices have a constant doping profile from source to drain, they have a great scalability without the need for rigorously controlled doping and activation techniques. These devices also present a flexible threshold voltage, which strongly depends on the device cross section. This work proposes an analytical model for JNTs. The model is derived from the solution of the Poisson equation with the appropriate boundary conditions. The quantum confinement for devices of reduced dimensions has also been accounted. The threshold voltage in cylindrical and trigate JNTs are analyzed. Tridimensional numerical simulations were performed to validate the model.
机译：无结纳米线晶体管（JNT）被认为在20 nm以下时代很有前途。由于这些器件从源极到漏极具有恒定的掺杂分布，因此它们具有很大的可扩展性，而无需严格控制的掺杂和激活技术。这些器件还具有灵活的阈值电压，这在很大程度上取决于器件的横截面。这项工作提出了JNT的分析模型。该模型是从具有适当边界条件的泊松方程的解中得出的。还考虑了尺寸减小的器件的量子限制。分析了圆柱形和三栅极JNT中的阈值电压。进行了三维数值模拟以验证模型。

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  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    R. D. Trevisoli; R. T. Doria; M. A. Pavanello;

  • 作者单位

    LSI/PSI, University of Sao Paulo, Av. Professor Luciano Gualberto, trav. 3, n. 158, Sao Paulo, 05508-010 - Brazil;

    Department of Electrical Engineering, Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco 3972, 09850-901, Sao Bernardo do Campo, Brazil;

    LSI/PSI, University of Sao Paulo, Av. Professor Luciano Gualberto, trav. 3, n. 158, Sao Paulo, 05508-010 - Brazil,Department of Electrical Engineering, Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco 3972, 09850-901, Sao Bernardo do Campo, Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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