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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Enhancement of light emission from an Europium(Ⅲ) complex based-OLED by using layer-by-layer assembled hole-transport films
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Enhancement of light emission from an Europium(Ⅲ) complex based-OLED by using layer-by-layer assembled hole-transport films

机译：通过使用逐层组装的空穴传输膜增强from（Ⅲ）配合物基OLED的发光

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摘要

Rare earth complexes hold a promising future in light-emitting devices owing to their strong and sharp luminescence with very high quantum efficiency. Here we report an effective yet very simple way to study and eventually enhance the optoelectronic performance of an organic light emitting device (OLED) based on europium(Ⅲ) tris(dibenzoylmethane) mono(1,10-phenanthroline), Eu(DBM)3Phen as an emitter. The approach is based on the layer-by-layer deposition of hole-transport films made of PANI/PEDOT:PSS bilayers onto the ITO anode, prior to the emissive layer. As a main advantage, the procedure ensures a great control of the hole-transport film thickness at nanometer level, and thus provides different interfacial conditions. Moreover, we have observed that the device's current density and luminance are increased when PANI/PEDOT:PSS bilayers are applied. Such OLEDs emit purple color due to contributions from both Eu(Ⅲ) and PVK emissions.
机译：稀土配合物由于其强大而尖锐的发光以及非常高的量子效率而在发光器件中拥有广阔的前景。在这里，我们报告了一种有效而非常简单的方法，用于研究并最终增强基于on（Ⅲ）三（二苯甲酰甲烷）单（1,10-菲咯啉），Eu（DBM）3Phen的有机发光器件（OLED）的光电性能。作为发射器。该方法基于由PANI / PEDOT：PSS双层制成的空穴传输膜在发光层之前的ITO阳极上的逐层沉积。作为主要优点，该过程确保了在纳米水平上很好地控制空穴传输膜的厚度，因此提供了不同的界面条件。此外，我们已经观察到，当应用PANI / PEDOT：PSS双层时，器件的电流密度和亮度会增加。此类OLED由于Eu（Ⅲ）和PVK的发射而发出紫色。

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  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    Gerson Santos; Leonardo G. Paterno; Fernando J. Fonseca; Adnei M. Andrade; Luiz Pereira;

  • 作者单位

    Polytechnic School - University of Sao Paulo, Departamento de Engenharia de Sistemas Eletronicos, Sao Paulo-SP, 05509-900, Brazil;

    Polytechnic School - University of Sao Paulo, Departamento de Engenharia de Sistemas Eletronicos, Sao Paulo-SP, 05509-900, Brazil;

    Polytechnic School - University of Sao Paulo, Departamento de Engenharia de Sistemas Eletronicos, Sao Paulo-SP, 05509-900, Brazil;

    Instituto de Eletrotecnica e Energia - Universidade de Sao Paulo, Sao Paulo 05508-010, Brazil;

    Department of Physics and I3N - Institute de Nanoestruturas, Nanofabricacao e Nanomodulacao, Universidade de Aveiro, 3810-193 Aveiro, Portugal;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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