• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare
【24h】

Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

机译：随机电报噪声：从设备物理学家的梦想到设计师的噩梦

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An overview is given on Random Telegraph Noise (RTN) in MOS-based devices. First, the basic properties and physics are briefly outlined, emphasizing the stochastic nature of its main parameters: the capture and emission time constant, while its amplitude is fixed and specific for each trap. Different techniques exist to characterize RTN in MOS devices, either by time or frequency domain measurements. A distinction can also be made between dynamic equilibrium methods like noise spectroscopy or transient measurements, based on a Deep-Level Transient Spectroscopy approach. While single-device based RTN measurements are still of high value, for modern circuit applications, techniques are being developed allowing a fast assessment of RTN in a large number of transistors. The scaling of CMOS technologies to the 32 nm and below raises the issue of variability induced either by random dopant fluctuations or in general, by random charge fluctuations, both spatially and in time. As will be seen, the presence of traps responsible for RTN brings about an additional source of variability which may become dominant in future memories. Finally, it will be shown that RTN is not only a fundamental component of 1/f noise but the same oxide traps are also largely responsible for the Bias Temperature Instability (BTI) in scaled MOSFETs. This leads to a self-consistent model for BTI and a stochastic approach towards the reliability prediction of deep submicron CMOS technologies.
机译：概述了基于MOS的设备中的随机电报噪声（RTN）。首先，简要概述其基本特性和物理性质，强调其主要参数的随机性质：捕获和发射时间常数，而其振幅是固定的，并且对于每个陷阱都是特定的。存在通过时域或频域测量来表征MOS器件中RTN的不同技术。基于深层瞬态光谱法，还可以在动态平衡方法（例如噪声光谱法或瞬态测量）之间进行区分。尽管基于单设备的RTN测量仍然具有很高的价值，但对于现代电路应用，正在开发可快速评估大量晶体管中的RTN的技术。 CMOS技术的缩放至32nm及以下引起了由随机掺杂物波动或通常由空间和时间上的随机电荷波动引起的可变性的问题。可以看出，负责RTN的陷阱的存在带来了可变性的其他来源，这种可变性可能在未来的存储器中占主导地位。最后，将显示RTN不仅是1 / f噪声的基本成分，而且相同的氧化物陷阱也对比例化MOSFET的偏置温度不稳定性（BTI）负有很大责任。这导致了BTI的自洽模型和用于预测深亚微米CMOS技术可靠性的随机方法。

著录项

  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    E. Simoen; B. Kaczer; M. Toledano-Luque; C. Claeys;

  • 作者单位

    Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

    Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

    Imec, Kapeldreef 75, B-3001 Leuven, Belgium,Dpto. Fisica Aplicada III, Universidad Complutense de Madrid, Spain;

    Imec, Kapeldreef 75, B-3001 Leuven, Belgium,Department Electrical Engineering, K.U. Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号