Microstructural Characterization of Closely-Lattice-Matched AlIn(Ga)N Alloys for High Electron Mobility Transistors

机译：高电子迁移率晶体管的晶格匹配的AlIn（Ga）N合金的微观结构表征

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来源
《International Metallographic Society Annual meeting;Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting》|2011年|1354-1355|共2页
会议地点 Nashville TN(US)
作者
Lin Zhou; L.L. Kirste; Taek Lim; Rolf Aidam; O. Ambacher; David J. Smith;
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作者单位

Department of Physics, Arizona State University, Tempe, AZ 85287;

rnFraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany79108;

rnFraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany79108;

rnFraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany79108;

rnFraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany79108;

rnDepartment of Physics, Arizona State University, Tempe, AZ 85287;

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Microstructural Characterization of Closely-Lattice-Matched AlIn(Ga)N Alloys for High Electron Mobility Transistors

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