Applications of Electron Channeling Contrast Imaging for Characterizing Nitride Semiconductor Thin Films

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• 来源
  《Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting;International Metallographic Society Annual meeting》|2012年|684-685|共2页
• 会议地点 Phoenix AZ(US)
• 作者

  C. Trager-Cowan; G. Naresh-Kumar; B. Hourahine; P. R. Edwards; J. Bruckbauer; R. W. Martin; C. Mauder; A. P. Day; G. England; A. Winkelmann; P. J. Parbrook; A. J. Wilkinson;

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• 作者单位

  SUPA, Dept of Physics, University of Strathclyde, Glasgow G4 ONG, UK;

  SUPA, Dept of Physics, University of Strathclyde, Glasgow G4 ONG, UK;

  SUPA, Dept of Physics, University of Strathclyde, Glasgow G4 ONG, UK;

  SUPA, Dept of Physics, University of Strathclyde, Glasgow G4 ONG, UK;

  SUPA, Dept of Physics, University of Strathclyde, Glasgow G4 ONG, UK;

  SUPA, Dept of Physics, University of Strathclyde, Glasgow G4 ONG, UK;

  AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Germany;

  rnAunt Daisy Scientific Ltd, Claremont House, High St, Lydney, Gloucestershire, GL15 5DX, UK;

  rnK.E. Developments Ltd, Cambridge, CB23 2RL, UK;

  rnMax-Planck-Institut fur Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany;

  rnTyndall National Institute, “Lee Maltings”, Prospect Row, Cork, Ireland;

  rnDepartment of Materials, University of Oxford, Oxford OX1 3PH, UK;

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• 原文格式 PDF
• 正文语种 eng
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