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首页> 外文会议>Microwave Integrated Circuits conference, 2009. EuMIC 2009 >Nanosecond pHEMT switches
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Nanosecond pHEMT switches

机译：纳秒级pHEMT开关

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摘要

In today's world of rapidly changing technology, systems are being designed with speed in mind. From sensors to processors, every designer wants to avoid delay of all kinds. To maintain very high bandwidth and linearity performance while simultaneously minimizing consumed power, many engineers choose Gallium Arsenide pHEMT switch products for their designs. With the increasing pressure for systems to do things faster, device lag times have become critical parameters. To meet this need, a unique proprietary pHEMT technology to ensure rapid settling has been developed enabling the state-of-the-art to be advanced from a previous level of almost 300 microseconds to less than 20 nanoseconds as demonstrated by the efforts reported in this paper.
机译：在当今瞬息万变的技术世界中，系统在设计时要考虑到速度。从传感器到处理器，每个设计师都希望避免各种延迟。为了保持非常高的带宽和线性性能，同时将功耗降至最低，许多工程师在设计中选择了砷化镓pHEMT开关产品。随着系统执行任务的压力越来越大，设备延迟时间已成为关键参数。为了满足这一需求，已经开发了一种独特的专有pHEMT技术来确保快速沉降，这使得最新技术可以从之前的将近300微秒提高到不到20纳秒，这在本报告中进行了努力。纸。

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