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首页> 外文会议>Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines >Fabrication of Micro-Relief Structures in Thick Resist for Anti-Counterfeiting Applications
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Fabrication of Micro-Relief Structures in Thick Resist for Anti-Counterfeiting Applications

机译：用于防伪应用的厚抗蚀剂微浮雕结构的制作

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Micro-relief surfaces including grating structures, greytone/micrographic features and microramps have been fabricated with depth features of up to 30 urn. Grey scale lithography has been used to produce the microstructures by a single UV exposure into a layer of thick resist. Arrays of the pixelated microstructures have formed the security features on the surface of optically variable devices. Each of the microstructures was designed to provide an intended optical effect in features such as portraits, symbols and lettering which comprised a larger image (typically 2.5 x 3 cm). An essential part of the process has been the determination of the optimum conditions for coating of the thick resist (AZ P4620) as a function of spin speed and exposure.
机译：微浮雕表面（包括光栅结构，灰阶/显微特征和微斜坡）的深度特征已被制成，最大深度为30 um。灰度光刻已经用于通过单次紫外线曝光进入厚抗蚀剂层来产生微结构。像素化微结构的阵列已在光学可变设备的表面上形成了安全特征。每个微结构都经过设计，可在包括较大图像（通常为2.5 x 3 cm）的肖像，符号和文字等特征中提供预期的光学效果。该过程的重要部分是确定作为旋转速度和曝光量的函数的厚抗蚀剂（AZ P4620）的最佳涂覆条件。

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