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Microscale Measurement of Stresses in a Silicon Flexure Using Raman Spectroscopy

机译：使用拉曼光谱法对硅弯曲中的应力进行微型测量

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摘要

We report the use of Raman spectroscopy to characterize the bending stresses in a deep reactive-ion etched, single-crystal, silicon flexure of length 2950 μm, width 480 μm, thickness 150 μm, and fillet radius 65 μm, subjected to a tip displacement of 69.5 μm. The spectral resolution of the measurement was 0.02 cm~(-1) , which corresponds to a stress resolution of ～10 MPa, and the spatial resolution was ～1 μm. Line scans were performed across the thickness, at several locations along the length, of the flexure. The changes in the Raman shift were converted to stress values, assuming a uniaxial stress state, without the use of any fitting parameters. A comparison of the measured values with the predictions of analytical and numerical models indicates agreement to within 25-35 MPa (or ～15%) at locations sufficiently distant from the root. At the root itself, the complex nature of the stress distribution precludes unambiguous stress determination using spectroscopic measurements.
机译：我们报告了拉曼光谱的使用，以表征在深反应离子刻蚀的单晶硅弯曲中的弯曲应力，该弯曲长度为2950μm，宽度为480μm，厚度为150μm，圆角半径为65μm，受尖端位移的影响69.5微米测量的光谱分辨率为0.02 cm〜（-1），对应的应力分辨率为〜10 MPa，空间分辨率为〜1μm。沿着弯曲的长度在多个位置沿厚度进行线扫描。拉曼位移的变化被转换为应力值（假设为单轴应力状态），而无需使用任何拟合参数。将测量值与分析模型和数值模型的预测结果进行比较表明，在距根部足够远的位置，其一致性在25-35 MPa（或〜15％）之内。从根本上讲，应力分布的复杂性排除了使用光谱测量确定应力的明确性。

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